FR2437028A1 - MOS integrated constant current source - has two MOSFETs whose source-drain paths are saturated and connected in series - Google Patents

MOS integrated constant current source - has two MOSFETs whose source-drain paths are saturated and connected in series

Info

Publication number
FR2437028A1
FR2437028A1 FR7922662A FR7922662A FR2437028A1 FR 2437028 A1 FR2437028 A1 FR 2437028A1 FR 7922662 A FR7922662 A FR 7922662A FR 7922662 A FR7922662 A FR 7922662A FR 2437028 A1 FR2437028 A1 FR 2437028A1
Authority
FR
France
Prior art keywords
source
saturated
series
constant current
current source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7922662A
Other languages
French (fr)
Other versions
FR2437028B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2437028A1 publication Critical patent/FR2437028A1/en
Application granted granted Critical
Publication of FR2437028B1 publication Critical patent/FR2437028B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/247—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage

Abstract

The source has a first MOSFET. This is operated with a saturated source-drain path owing to a fixed potential applied to its gate and to one of the other electrodes. Its other electrode carries constant current through an output. A second saturated MOSFET (T2) is provided, whose source-drain path is in series with that of the first MOSFET (T1). It is connected to the current source output (Ua), and its slope is steeper than that of the first MOSFET (T1).
FR7922662A 1978-09-19 1979-09-11 MOS integrated constant current source - has two MOSFETs whose source-drain paths are saturated and connected in series Granted FR2437028A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19782840740 DE2840740C2 (en) 1978-09-19 1978-09-19 MOS-integrated constant current source

Publications (2)

Publication Number Publication Date
FR2437028A1 true FR2437028A1 (en) 1980-04-18
FR2437028B1 FR2437028B1 (en) 1983-06-24

Family

ID=6049847

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7922662A Granted FR2437028A1 (en) 1978-09-19 1979-09-11 MOS integrated constant current source - has two MOSFETs whose source-drain paths are saturated and connected in series

Country Status (3)

Country Link
JP (1) JPS5543699A (en)
DE (1) DE2840740C2 (en)
FR (1) FR2437028A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4329867C1 (en) * 1993-09-03 1994-09-15 Siemens Ag Current mirror
DE19801994C1 (en) * 1998-01-20 1999-08-26 Siemens Ag Reference voltage generator

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USB387171I5 (en) * 1973-08-09 1975-01-28
JPS5150446A (en) * 1974-10-30 1976-05-04 Hitachi Ltd TEIDENATSU KAIRO
JPS5422557A (en) * 1977-07-22 1979-02-20 Hitachi Ltd Constant current circuit

Also Published As

Publication number Publication date
DE2840740A1 (en) 1980-03-20
DE2840740C2 (en) 1983-01-05
FR2437028B1 (en) 1983-06-24
JPS5543699A (en) 1980-03-27

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Legal Events

Date Code Title Description
ST Notification of lapse