JPS5752175A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5752175A
JPS5752175A JP12831180A JP12831180A JPS5752175A JP S5752175 A JPS5752175 A JP S5752175A JP 12831180 A JP12831180 A JP 12831180A JP 12831180 A JP12831180 A JP 12831180A JP S5752175 A JPS5752175 A JP S5752175A
Authority
JP
Japan
Prior art keywords
transistor
gate
transistors
field effect
type field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12831180A
Other languages
Japanese (ja)
Other versions
JPS6210031B2 (en
Inventor
Kiyoto Matsumoto
Osamu Nishino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12831180A priority Critical patent/JPS5752175A/en
Publication of JPS5752175A publication Critical patent/JPS5752175A/en
Publication of JPS6210031B2 publication Critical patent/JPS6210031B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors

Abstract

PURPOSE:To obtain an impedance conversion element having short recovery time against positive or negative pulse input by connecting the first and second transistors in parallel between the gate and the source of a junction type field effect transistor. CONSTITUTION:The collectors 15, 16 of P-N-P type transistors 11, 12 are connected to the input gate 14 of an N-channel junction type field effect transistor 13, and the emitters 18, 19 of the transistors 11, 12 are connected to the source 17. The base 20 of the transistor 11 is connected to the emitter 18, and the base 21 of the transistor 12 is connected to the collector 16. When positive pulse voltage is applied to the input gate 14 in this circuit configuration, large quantity of leakage current flows through the transistor 11, and when negative pusle voltage is applied to the gate, large quantity of leakage current flows through the transistor 12, with the result that the recovery of the junction type field effect transistor 13 can be accelerated for the pulse input.
JP12831180A 1980-09-16 1980-09-16 Semiconductor device Granted JPS5752175A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12831180A JPS5752175A (en) 1980-09-16 1980-09-16 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12831180A JPS5752175A (en) 1980-09-16 1980-09-16 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5752175A true JPS5752175A (en) 1982-03-27
JPS6210031B2 JPS6210031B2 (en) 1987-03-04

Family

ID=14981628

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12831180A Granted JPS5752175A (en) 1980-09-16 1980-09-16 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5752175A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58168150U (en) * 1982-05-04 1983-11-09 三洋電機株式会社 FET for condenser microphone

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0245135U (en) * 1988-09-16 1990-03-28

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58168150U (en) * 1982-05-04 1983-11-09 三洋電機株式会社 FET for condenser microphone

Also Published As

Publication number Publication date
JPS6210031B2 (en) 1987-03-04

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