JPS5588380A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS5588380A
JPS5588380A JP16572278A JP16572278A JPS5588380A JP S5588380 A JPS5588380 A JP S5588380A JP 16572278 A JP16572278 A JP 16572278A JP 16572278 A JP16572278 A JP 16572278A JP S5588380 A JPS5588380 A JP S5588380A
Authority
JP
Japan
Prior art keywords
gate
diode
fet
integrated circuit
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16572278A
Other languages
Japanese (ja)
Other versions
JPS6155788B2 (en
Inventor
Hiromitsu Takagi
Akio Shimano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP16572278A priority Critical patent/JPS5588380A/en
Publication of JPS5588380A publication Critical patent/JPS5588380A/en
Publication of JPS6155788B2 publication Critical patent/JPS6155788B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To increase logical amplitude in input/output characteristics and improve noise immunity by connecting a diode in series to the gate electrode of an enhancement type Schottky gate FET.
CONSTITUTION: A diode 23 is connected in series to the gate electrode of an enhancement type FET 22 which has a Schottky junction as its gate. By so doing, voltage applied effectively between the gate and source of the FET 22 is reduced than actually applied input signal voltage by the diode 23, therefore, logical amplitude in input/output characteristics can be increased and noise immunity can be improved.
COPYRIGHT: (C)1980,JPO&Japio
JP16572278A 1978-12-26 1978-12-26 Semiconductor integrated circuit Granted JPS5588380A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16572278A JPS5588380A (en) 1978-12-26 1978-12-26 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16572278A JPS5588380A (en) 1978-12-26 1978-12-26 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS5588380A true JPS5588380A (en) 1980-07-04
JPS6155788B2 JPS6155788B2 (en) 1986-11-29

Family

ID=15817819

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16572278A Granted JPS5588380A (en) 1978-12-26 1978-12-26 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5588380A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4400636A (en) * 1980-12-05 1983-08-23 Ibm Corporation Threshold voltage tolerant logic

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01172190U (en) * 1988-05-19 1989-12-06

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4400636A (en) * 1980-12-05 1983-08-23 Ibm Corporation Threshold voltage tolerant logic

Also Published As

Publication number Publication date
JPS6155788B2 (en) 1986-11-29

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