JPS54113822A - Substrate bias voltage generating circuit - Google Patents

Substrate bias voltage generating circuit

Info

Publication number
JPS54113822A
JPS54113822A JP1981478A JP1981478A JPS54113822A JP S54113822 A JPS54113822 A JP S54113822A JP 1981478 A JP1981478 A JP 1981478A JP 1981478 A JP1981478 A JP 1981478A JP S54113822 A JPS54113822 A JP S54113822A
Authority
JP
Japan
Prior art keywords
bias voltage
substrate bias
generating circuit
voltage generating
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1981478A
Other languages
Japanese (ja)
Inventor
Shinji Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1981478A priority Critical patent/JPS54113822A/en
Publication of JPS54113822A publication Critical patent/JPS54113822A/en
Pending legal-status Critical Current

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  • Semiconductor Integrated Circuits (AREA)
  • Dc-Dc Converters (AREA)

Abstract

PURPOSE: To construct a substrate bias generating circuit capable of obtaining a bias voltage effective for an improvement of the operational speed and a reduction of the power consumption, by paying attention to that substrate bias of more than -5V be effective for a reduction of parasitic capacitance.
CONSTITUTION: The construction is made by a first pulse smoothing circuit (MIS diode Q1, condenser C1), a second pulse smoothing circuit (MIS diode Q2, condenser C2) and MIS diode Q2, with a gate and drain connected by connecting the source to the connection point of a MISFET Q2 and the diode Q2, that is an output point of the second pulse smoothing circuit. In such circuit construction, the output bias voltage VBB is obtained at the drain of the MISFET Q2.
COPYRIGHT: (C)1979,JPO&Japio
JP1981478A 1978-02-24 1978-02-24 Substrate bias voltage generating circuit Pending JPS54113822A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1981478A JPS54113822A (en) 1978-02-24 1978-02-24 Substrate bias voltage generating circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1981478A JPS54113822A (en) 1978-02-24 1978-02-24 Substrate bias voltage generating circuit

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP59152906A Division JPS60122416A (en) 1984-07-25 1984-07-25 Circuit for generating substrate bias voltage

Publications (1)

Publication Number Publication Date
JPS54113822A true JPS54113822A (en) 1979-09-05

Family

ID=12009786

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1981478A Pending JPS54113822A (en) 1978-02-24 1978-02-24 Substrate bias voltage generating circuit

Country Status (1)

Country Link
JP (1) JPS54113822A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54159158A (en) * 1978-06-06 1979-12-15 Nec Corp Field effect transistor circuit
JPS5529198A (en) * 1978-08-23 1980-03-01 Rockwell International Corp Substrate bias generator circuit
JPH01216190A (en) * 1987-09-11 1989-08-30 Tokyo Electric Power Co Inc:The Structure of intake pipeline
JPH01259751A (en) * 1988-04-07 1989-10-17 Toshiba Corp Step-up circuit
US4935644A (en) * 1987-08-13 1990-06-19 Kabushiki Kaisha Toshiba Charge pump circuit having a boosted output signal

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54159158A (en) * 1978-06-06 1979-12-15 Nec Corp Field effect transistor circuit
JPS5529198A (en) * 1978-08-23 1980-03-01 Rockwell International Corp Substrate bias generator circuit
US4935644A (en) * 1987-08-13 1990-06-19 Kabushiki Kaisha Toshiba Charge pump circuit having a boosted output signal
JPH01216190A (en) * 1987-09-11 1989-08-30 Tokyo Electric Power Co Inc:The Structure of intake pipeline
JPH01259751A (en) * 1988-04-07 1989-10-17 Toshiba Corp Step-up circuit

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