JPS54148469A - Complementary mos inverter circuit device and its manufacture - Google Patents

Complementary mos inverter circuit device and its manufacture

Info

Publication number
JPS54148469A
JPS54148469A JP5657078A JP5657078A JPS54148469A JP S54148469 A JPS54148469 A JP S54148469A JP 5657078 A JP5657078 A JP 5657078A JP 5657078 A JP5657078 A JP 5657078A JP S54148469 A JPS54148469 A JP S54148469A
Authority
JP
Japan
Prior art keywords
type
circuit
complementary mos
pnp
npn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5657078A
Other languages
Japanese (ja)
Inventor
Kimito Horie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP5657078A priority Critical patent/JPS54148469A/en
Publication of JPS54148469A publication Critical patent/JPS54148469A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09448Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET in combination with bipolar transistors [BIMOS]

Abstract

PURPOSE:To increase the driving capacity to the high load without sacrificing the advantages of the circuit by forming the circuit with P-type and N-type FET's plus PNP-type and NPN-type bipolar semiconductors. CONSTITUTION:Complementary MOS inverter circuit 1 is formed with P-type and N-type IGFET2 and 3 plus NPN-type and PNP-type bipolar transistors 4 and 5. In case the input signal to be applied to gate 13 and 14 of FET2 and 3 through terminal 6 is higher than the positive threshold voltage, FET3 conducts. And transistor 5 delivers the negative signal through output terminal 7. In case the input signal becomes less than the negative threshold voltage, FET2 conducts to deliver the positive signal from transistor 4. Thus, circuit 1 performs the inverter's function with no use of the passive load element, and the power is consumed only at the operation time of switching. As a result, a circuit featuring the low power consumption and high driving capacity to the high load can be obtained. Such circuit can be formed on the single semiconductor substrate.
JP5657078A 1978-05-15 1978-05-15 Complementary mos inverter circuit device and its manufacture Pending JPS54148469A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5657078A JPS54148469A (en) 1978-05-15 1978-05-15 Complementary mos inverter circuit device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5657078A JPS54148469A (en) 1978-05-15 1978-05-15 Complementary mos inverter circuit device and its manufacture

Publications (1)

Publication Number Publication Date
JPS54148469A true JPS54148469A (en) 1979-11-20

Family

ID=13030793

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5657078A Pending JPS54148469A (en) 1978-05-15 1978-05-15 Complementary mos inverter circuit device and its manufacture

Country Status (1)

Country Link
JP (1) JPS54148469A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5928726A (en) * 1982-08-11 1984-02-15 Hitachi Ltd Semiconductor integrated circuit
JPS6016023A (en) * 1983-07-08 1985-01-26 Fujitsu Ltd Complementary logic circuit
EP0132822A2 (en) * 1983-07-25 1985-02-13 Hitachi, Ltd. Composite circuit of bipolar transistors and field effect transistors
JPS60134523A (en) * 1983-12-22 1985-07-17 Nec Corp Logic circuit
JPS61224519A (en) * 1985-03-28 1986-10-06 Toshiba Corp Logic circuit
US4654548A (en) * 1983-07-08 1987-03-31 Fujitsu Limited Complementary logic circuit
US4791320A (en) * 1985-08-20 1988-12-13 Fujitsu Limited Bipolar-MISFET compound inverter with discharge transistor
US4813020A (en) * 1985-02-07 1989-03-14 Hitachi, Ltd. Semiconductor device
FR2630601A1 (en) * 1988-04-21 1989-10-27 Samsung Electronics Co Ltd BiCMOS inverter circuit
US5013936A (en) * 1990-01-31 1991-05-07 Mitsubishi Denki Kabushiki Kaisha BiCMOS logic circuit using complementary bipolar transistors having their emitters connected together
JPH0689172A (en) * 1993-01-13 1994-03-29 Hitachi Ltd Computer
US5362998A (en) * 1990-09-19 1994-11-08 Hitachi Ltd. Composite circuit of bipolar transistors and MOS transistors and semiconductor integrated circuit device using the same

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5928726A (en) * 1982-08-11 1984-02-15 Hitachi Ltd Semiconductor integrated circuit
JPS6016023A (en) * 1983-07-08 1985-01-26 Fujitsu Ltd Complementary logic circuit
US4654548A (en) * 1983-07-08 1987-03-31 Fujitsu Limited Complementary logic circuit
EP0132822A2 (en) * 1983-07-25 1985-02-13 Hitachi, Ltd. Composite circuit of bipolar transistors and field effect transistors
JPS60134523A (en) * 1983-12-22 1985-07-17 Nec Corp Logic circuit
US4813020A (en) * 1985-02-07 1989-03-14 Hitachi, Ltd. Semiconductor device
JPS61224519A (en) * 1985-03-28 1986-10-06 Toshiba Corp Logic circuit
US4791320A (en) * 1985-08-20 1988-12-13 Fujitsu Limited Bipolar-MISFET compound inverter with discharge transistor
FR2630601A1 (en) * 1988-04-21 1989-10-27 Samsung Electronics Co Ltd BiCMOS inverter circuit
US5013936A (en) * 1990-01-31 1991-05-07 Mitsubishi Denki Kabushiki Kaisha BiCMOS logic circuit using complementary bipolar transistors having their emitters connected together
US5362998A (en) * 1990-09-19 1994-11-08 Hitachi Ltd. Composite circuit of bipolar transistors and MOS transistors and semiconductor integrated circuit device using the same
JPH0689172A (en) * 1993-01-13 1994-03-29 Hitachi Ltd Computer

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