JPS54148469A - Complementary mos inverter circuit device and its manufacture - Google Patents
Complementary mos inverter circuit device and its manufactureInfo
- Publication number
- JPS54148469A JPS54148469A JP5657078A JP5657078A JPS54148469A JP S54148469 A JPS54148469 A JP S54148469A JP 5657078 A JP5657078 A JP 5657078A JP 5657078 A JP5657078 A JP 5657078A JP S54148469 A JPS54148469 A JP S54148469A
- Authority
- JP
- Japan
- Prior art keywords
- type
- circuit
- complementary mos
- pnp
- npn
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000000295 complement Effects 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 108060009362 VPS41 Proteins 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 101700065472 FET3 Proteins 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
- H03K19/09448—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET in combination with bipolar transistors [BIMOS]
Abstract
PURPOSE:To increase the driving capacity to the high load without sacrificing the advantages of the circuit by forming the circuit with P-type and N-type FET's plus PNP-type and NPN-type bipolar semiconductors. CONSTITUTION:Complementary MOS inverter circuit 1 is formed with P-type and N-type IGFET2 and 3 plus NPN-type and PNP-type bipolar transistors 4 and 5. In case the input signal to be applied to gate 13 and 14 of FET2 and 3 through terminal 6 is higher than the positive threshold voltage, FET3 conducts. And transistor 5 delivers the negative signal through output terminal 7. In case the input signal becomes less than the negative threshold voltage, FET2 conducts to deliver the positive signal from transistor 4. Thus, circuit 1 performs the inverter's function with no use of the passive load element, and the power is consumed only at the operation time of switching. As a result, a circuit featuring the low power consumption and high driving capacity to the high load can be obtained. Such circuit can be formed on the single semiconductor substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5657078A JPS54148469A (en) | 1978-05-15 | 1978-05-15 | Complementary mos inverter circuit device and its manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5657078A JPS54148469A (en) | 1978-05-15 | 1978-05-15 | Complementary mos inverter circuit device and its manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54148469A true JPS54148469A (en) | 1979-11-20 |
Family
ID=13030793
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5657078A Pending JPS54148469A (en) | 1978-05-15 | 1978-05-15 | Complementary mos inverter circuit device and its manufacture |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54148469A (en) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5928726A (en) * | 1982-08-11 | 1984-02-15 | Hitachi Ltd | Semiconductor integrated circuit |
JPS6016023A (en) * | 1983-07-08 | 1985-01-26 | Fujitsu Ltd | Complementary logic circuit |
EP0132822A2 (en) * | 1983-07-25 | 1985-02-13 | Hitachi, Ltd. | Composite circuit of bipolar transistors and field effect transistors |
JPS60134523A (en) * | 1983-12-22 | 1985-07-17 | Nec Corp | Logic circuit |
JPS61224519A (en) * | 1985-03-28 | 1986-10-06 | Toshiba Corp | Logic circuit |
US4654548A (en) * | 1983-07-08 | 1987-03-31 | Fujitsu Limited | Complementary logic circuit |
US4791320A (en) * | 1985-08-20 | 1988-12-13 | Fujitsu Limited | Bipolar-MISFET compound inverter with discharge transistor |
US4813020A (en) * | 1985-02-07 | 1989-03-14 | Hitachi, Ltd. | Semiconductor device |
FR2630601A1 (en) * | 1988-04-21 | 1989-10-27 | Samsung Electronics Co Ltd | BiCMOS inverter circuit |
US5013936A (en) * | 1990-01-31 | 1991-05-07 | Mitsubishi Denki Kabushiki Kaisha | BiCMOS logic circuit using complementary bipolar transistors having their emitters connected together |
JPH0689172A (en) * | 1993-01-13 | 1994-03-29 | Hitachi Ltd | Computer |
US5362998A (en) * | 1990-09-19 | 1994-11-08 | Hitachi Ltd. | Composite circuit of bipolar transistors and MOS transistors and semiconductor integrated circuit device using the same |
-
1978
- 1978-05-15 JP JP5657078A patent/JPS54148469A/en active Pending
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5928726A (en) * | 1982-08-11 | 1984-02-15 | Hitachi Ltd | Semiconductor integrated circuit |
JPS6016023A (en) * | 1983-07-08 | 1985-01-26 | Fujitsu Ltd | Complementary logic circuit |
US4654548A (en) * | 1983-07-08 | 1987-03-31 | Fujitsu Limited | Complementary logic circuit |
EP0132822A2 (en) * | 1983-07-25 | 1985-02-13 | Hitachi, Ltd. | Composite circuit of bipolar transistors and field effect transistors |
JPS60134523A (en) * | 1983-12-22 | 1985-07-17 | Nec Corp | Logic circuit |
US4813020A (en) * | 1985-02-07 | 1989-03-14 | Hitachi, Ltd. | Semiconductor device |
JPS61224519A (en) * | 1985-03-28 | 1986-10-06 | Toshiba Corp | Logic circuit |
US4791320A (en) * | 1985-08-20 | 1988-12-13 | Fujitsu Limited | Bipolar-MISFET compound inverter with discharge transistor |
FR2630601A1 (en) * | 1988-04-21 | 1989-10-27 | Samsung Electronics Co Ltd | BiCMOS inverter circuit |
US5013936A (en) * | 1990-01-31 | 1991-05-07 | Mitsubishi Denki Kabushiki Kaisha | BiCMOS logic circuit using complementary bipolar transistors having their emitters connected together |
US5362998A (en) * | 1990-09-19 | 1994-11-08 | Hitachi Ltd. | Composite circuit of bipolar transistors and MOS transistors and semiconductor integrated circuit device using the same |
JPH0689172A (en) * | 1993-01-13 | 1994-03-29 | Hitachi Ltd | Computer |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS55136726A (en) | High voltage mos inverter and its drive method | |
JPS55149871A (en) | Line voltage detector | |
JPS54131890A (en) | Semiconductor device | |
JPS54148469A (en) | Complementary mos inverter circuit device and its manufacture | |
JPS6471219A (en) | Buffer circuit and integrated circuit structure | |
JPS5493981A (en) | Semiconductor device | |
JPS5384578A (en) | Semiconductor integrated circuit | |
JPH02177614A (en) | Logic circuit | |
JPS58147158A (en) | Compound semiconductor field effect transistor | |
JPS55145363A (en) | Semiconductor device | |
JPS57203334A (en) | Semiconductor integrated circuit device | |
JPS60210028A (en) | Composite semiconductor circuit element | |
JPS62120063A (en) | Semiconductor device | |
JPS5565469A (en) | Mos integrated circuit | |
JPS5482179A (en) | Electrostatic inductive integrated circuit device | |
JPS6193655A (en) | Semiconductor device | |
JPH03162127A (en) | Voltage level converter | |
JPS58213530A (en) | Semiconductor integrated circuit | |
JPS5552590A (en) | Semiconductor memory unit | |
JPS58201422A (en) | Majority gate circuit | |
JPS63169061A (en) | Cmos integrated circuit device | |
JPS5767332A (en) | Semiconductor integrated circuit device | |
JPS5588380A (en) | Semiconductor integrated circuit | |
JPH0262113A (en) | Buffer circuit | |
JPS58150330A (en) | Semiconductor integrated circuit device |