JPS5374385A - Manufacture of field effect semiconductor device - Google Patents
Manufacture of field effect semiconductor deviceInfo
- Publication number
- JPS5374385A JPS5374385A JP14971776A JP14971776A JPS5374385A JP S5374385 A JPS5374385 A JP S5374385A JP 14971776 A JP14971776 A JP 14971776A JP 14971776 A JP14971776 A JP 14971776A JP S5374385 A JPS5374385 A JP S5374385A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- semiconductor device
- field effect
- effect semiconductor
- dielectric strength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
Abstract
PURPOSE:To obtain a high dielectric strength as well as a high output by forming a depletion layer to enhance the drain dielectric strength inside the substrate and connecting in series the input MOSFET and the output junction type FET.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14971776A JPS5374385A (en) | 1976-12-15 | 1976-12-15 | Manufacture of field effect semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14971776A JPS5374385A (en) | 1976-12-15 | 1976-12-15 | Manufacture of field effect semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5374385A true JPS5374385A (en) | 1978-07-01 |
Family
ID=15481272
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14971776A Pending JPS5374385A (en) | 1976-12-15 | 1976-12-15 | Manufacture of field effect semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5374385A (en) |
Cited By (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5563876A (en) * | 1978-11-08 | 1980-05-14 | Sony Corp | Field-effect semiconductor device |
JPS57103361A (en) * | 1980-10-29 | 1982-06-26 | Siemens Ag | Mis controlled semiconductor element |
WO1982002981A1 (en) * | 1981-02-23 | 1982-09-02 | Inc Motorola | Mos power transistor |
US4376286A (en) * | 1978-10-13 | 1983-03-08 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
US4455565A (en) * | 1980-02-22 | 1984-06-19 | Rca Corporation | Vertical MOSFET with an aligned gate electrode and aligned drain shield electrode |
US4593302A (en) * | 1980-08-18 | 1986-06-03 | International Rectifier Corporation | Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide |
US4680853A (en) * | 1980-08-18 | 1987-07-21 | International Rectifier Corporation | Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide |
US4705759A (en) * | 1978-10-13 | 1987-11-10 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
JPS6323365A (en) * | 1978-10-13 | 1988-01-30 | インターナショナル・レクチファイヤー・コーポレーション | Mosfet device |
JPS6387771A (en) * | 1987-07-17 | 1988-04-19 | Nec Corp | Field effect transistor |
US4959699A (en) * | 1978-10-13 | 1990-09-25 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
US4974059A (en) * | 1982-12-21 | 1990-11-27 | International Rectifier Corporation | Semiconductor high-power mosfet device |
US5519244A (en) * | 1979-05-25 | 1996-05-21 | Hitachi, Ltd. | Semiconductor device having aligned semiconductor regions and a plurality of MISFETs |
US5663080A (en) * | 1991-11-29 | 1997-09-02 | Sgs-Thomson Microelectronics, S.R.L. | Process for manufacturing MOS-type integrated circuits |
US5798554A (en) * | 1995-02-24 | 1998-08-25 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | MOS-technology power device integrated structure and manufacturing process thereof |
US5841167A (en) * | 1995-12-28 | 1998-11-24 | Sgs-Thomson Microelectronics S.R.L. | MOS-technology power device integrated structure |
US5869371A (en) * | 1995-06-07 | 1999-02-09 | Stmicroelectronics, Inc. | Structure and process for reducing the on-resistance of mos-gated power devices |
US5981343A (en) * | 1995-10-30 | 1999-11-09 | Sgs-Thomas Microelectronics, S.R.L. | Single feature size mos technology power device |
US6030870A (en) * | 1995-10-30 | 2000-02-29 | Sgs-Thomson Microelectronics, S.R.L. | High density MOS technology power device |
US6228719B1 (en) | 1995-11-06 | 2001-05-08 | Stmicroelectronics S.R.L. | MOS technology power device with low output resistance and low capacitance, and related manufacturing process |
US6492691B2 (en) | 1998-05-26 | 2002-12-10 | Stmicroelectronics S.R.L. | High integration density MOS technology power device structure |
JP2014140082A (en) * | 2014-05-07 | 2014-07-31 | Rohm Co Ltd | Semiconductor device and method for manufacturing the same |
-
1976
- 1976-12-15 JP JP14971776A patent/JPS5374385A/en active Pending
Cited By (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5598018A (en) * | 1978-10-13 | 1997-01-28 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
US5191396A (en) * | 1978-10-13 | 1993-03-02 | International Rectifier Corp. | High power mosfet with low on-resistance and high breakdown voltage |
US4705759A (en) * | 1978-10-13 | 1987-11-10 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
US4376286A (en) * | 1978-10-13 | 1983-03-08 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
US5742087A (en) * | 1978-10-13 | 1998-04-21 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
JPS6323365A (en) * | 1978-10-13 | 1988-01-30 | インターナショナル・レクチファイヤー・コーポレーション | Mosfet device |
US5338961A (en) * | 1978-10-13 | 1994-08-16 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
US4959699A (en) * | 1978-10-13 | 1990-09-25 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
JPS5563876A (en) * | 1978-11-08 | 1980-05-14 | Sony Corp | Field-effect semiconductor device |
US5519244A (en) * | 1979-05-25 | 1996-05-21 | Hitachi, Ltd. | Semiconductor device having aligned semiconductor regions and a plurality of MISFETs |
US4455565A (en) * | 1980-02-22 | 1984-06-19 | Rca Corporation | Vertical MOSFET with an aligned gate electrode and aligned drain shield electrode |
US4593302A (en) * | 1980-08-18 | 1986-06-03 | International Rectifier Corporation | Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide |
US4680853A (en) * | 1980-08-18 | 1987-07-21 | International Rectifier Corporation | Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide |
JPS57103361A (en) * | 1980-10-29 | 1982-06-26 | Siemens Ag | Mis controlled semiconductor element |
WO1982002981A1 (en) * | 1981-02-23 | 1982-09-02 | Inc Motorola | Mos power transistor |
US4974059A (en) * | 1982-12-21 | 1990-11-27 | International Rectifier Corporation | Semiconductor high-power mosfet device |
JPH0365026B2 (en) * | 1987-07-17 | 1991-10-09 | ||
JPS6387771A (en) * | 1987-07-17 | 1988-04-19 | Nec Corp | Field effect transistor |
US5696399A (en) * | 1991-11-29 | 1997-12-09 | Sgs-Thomson Microelectronics S.R.L. | Process for manufacturing MOS-type integrated circuits |
US5663080A (en) * | 1991-11-29 | 1997-09-02 | Sgs-Thomson Microelectronics, S.R.L. | Process for manufacturing MOS-type integrated circuits |
US5798554A (en) * | 1995-02-24 | 1998-08-25 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | MOS-technology power device integrated structure and manufacturing process thereof |
US6111297A (en) * | 1995-02-24 | 2000-08-29 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | MOS-technology power device integrated structure and manufacturing process thereof |
US5869371A (en) * | 1995-06-07 | 1999-02-09 | Stmicroelectronics, Inc. | Structure and process for reducing the on-resistance of mos-gated power devices |
US6046473A (en) * | 1995-06-07 | 2000-04-04 | Stmicroelectronics, Inc. | Structure and process for reducing the on-resistance of MOS-gated power devices |
US6030870A (en) * | 1995-10-30 | 2000-02-29 | Sgs-Thomson Microelectronics, S.R.L. | High density MOS technology power device |
US5985721A (en) * | 1995-10-30 | 1999-11-16 | Sgs-Thomson Microelectronics, S.R.L. | Single feature size MOS technology power device |
US5981343A (en) * | 1995-10-30 | 1999-11-09 | Sgs-Thomas Microelectronics, S.R.L. | Single feature size mos technology power device |
US6054737A (en) * | 1995-10-30 | 2000-04-25 | Sgs-Thomson Microelectronics S.R.L. | High density MOS technology power device |
US6064087A (en) * | 1995-10-30 | 2000-05-16 | Sgs-Thomson Microelectronics, S.R.L. | Single feature size MOS technology power device |
US6228719B1 (en) | 1995-11-06 | 2001-05-08 | Stmicroelectronics S.R.L. | MOS technology power device with low output resistance and low capacitance, and related manufacturing process |
US6051862A (en) * | 1995-12-28 | 2000-04-18 | Sgs-Thomson Microelectronics S.R.L. | MOS-technology power device integrated structure |
US5841167A (en) * | 1995-12-28 | 1998-11-24 | Sgs-Thomson Microelectronics S.R.L. | MOS-technology power device integrated structure |
US6492691B2 (en) | 1998-05-26 | 2002-12-10 | Stmicroelectronics S.R.L. | High integration density MOS technology power device structure |
JP2014140082A (en) * | 2014-05-07 | 2014-07-31 | Rohm Co Ltd | Semiconductor device and method for manufacturing the same |
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