JPS5374385A - Manufacture of field effect semiconductor device - Google Patents

Manufacture of field effect semiconductor device

Info

Publication number
JPS5374385A
JPS5374385A JP14971776A JP14971776A JPS5374385A JP S5374385 A JPS5374385 A JP S5374385A JP 14971776 A JP14971776 A JP 14971776A JP 14971776 A JP14971776 A JP 14971776A JP S5374385 A JPS5374385 A JP S5374385A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
field effect
effect semiconductor
dielectric strength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14971776A
Other languages
Japanese (ja)
Inventor
Takeaki Okabe
Isao Yoshida
Tatsu Toriyabe
Shikayuki Ochi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14971776A priority Critical patent/JPS5374385A/en
Publication of JPS5374385A publication Critical patent/JPS5374385A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)

Abstract

PURPOSE:To obtain a high dielectric strength as well as a high output by forming a depletion layer to enhance the drain dielectric strength inside the substrate and connecting in series the input MOSFET and the output junction type FET.
JP14971776A 1976-12-15 1976-12-15 Manufacture of field effect semiconductor device Pending JPS5374385A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14971776A JPS5374385A (en) 1976-12-15 1976-12-15 Manufacture of field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14971776A JPS5374385A (en) 1976-12-15 1976-12-15 Manufacture of field effect semiconductor device

Publications (1)

Publication Number Publication Date
JPS5374385A true JPS5374385A (en) 1978-07-01

Family

ID=15481272

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14971776A Pending JPS5374385A (en) 1976-12-15 1976-12-15 Manufacture of field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS5374385A (en)

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5563876A (en) * 1978-11-08 1980-05-14 Sony Corp Field-effect semiconductor device
JPS57103361A (en) * 1980-10-29 1982-06-26 Siemens Ag Mis controlled semiconductor element
WO1982002981A1 (en) * 1981-02-23 1982-09-02 Inc Motorola Mos power transistor
US4376286A (en) * 1978-10-13 1983-03-08 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US4455565A (en) * 1980-02-22 1984-06-19 Rca Corporation Vertical MOSFET with an aligned gate electrode and aligned drain shield electrode
US4593302A (en) * 1980-08-18 1986-06-03 International Rectifier Corporation Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide
US4680853A (en) * 1980-08-18 1987-07-21 International Rectifier Corporation Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide
US4705759A (en) * 1978-10-13 1987-11-10 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
JPS6323365A (en) * 1978-10-13 1988-01-30 インターナショナル・レクチファイヤー・コーポレーション Mosfet device
JPS6387771A (en) * 1987-07-17 1988-04-19 Nec Corp Field effect transistor
US4959699A (en) * 1978-10-13 1990-09-25 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US4974059A (en) * 1982-12-21 1990-11-27 International Rectifier Corporation Semiconductor high-power mosfet device
US5519244A (en) * 1979-05-25 1996-05-21 Hitachi, Ltd. Semiconductor device having aligned semiconductor regions and a plurality of MISFETs
US5663080A (en) * 1991-11-29 1997-09-02 Sgs-Thomson Microelectronics, S.R.L. Process for manufacturing MOS-type integrated circuits
US5798554A (en) * 1995-02-24 1998-08-25 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno MOS-technology power device integrated structure and manufacturing process thereof
US5841167A (en) * 1995-12-28 1998-11-24 Sgs-Thomson Microelectronics S.R.L. MOS-technology power device integrated structure
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices
US5981343A (en) * 1995-10-30 1999-11-09 Sgs-Thomas Microelectronics, S.R.L. Single feature size mos technology power device
US6030870A (en) * 1995-10-30 2000-02-29 Sgs-Thomson Microelectronics, S.R.L. High density MOS technology power device
US6228719B1 (en) 1995-11-06 2001-05-08 Stmicroelectronics S.R.L. MOS technology power device with low output resistance and low capacitance, and related manufacturing process
US6492691B2 (en) 1998-05-26 2002-12-10 Stmicroelectronics S.R.L. High integration density MOS technology power device structure
JP2014140082A (en) * 2014-05-07 2014-07-31 Rohm Co Ltd Semiconductor device and method for manufacturing the same

Cited By (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5598018A (en) * 1978-10-13 1997-01-28 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5191396A (en) * 1978-10-13 1993-03-02 International Rectifier Corp. High power mosfet with low on-resistance and high breakdown voltage
US4705759A (en) * 1978-10-13 1987-11-10 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US4376286A (en) * 1978-10-13 1983-03-08 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5742087A (en) * 1978-10-13 1998-04-21 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
JPS6323365A (en) * 1978-10-13 1988-01-30 インターナショナル・レクチファイヤー・コーポレーション Mosfet device
US5338961A (en) * 1978-10-13 1994-08-16 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US4959699A (en) * 1978-10-13 1990-09-25 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
JPS5563876A (en) * 1978-11-08 1980-05-14 Sony Corp Field-effect semiconductor device
US5519244A (en) * 1979-05-25 1996-05-21 Hitachi, Ltd. Semiconductor device having aligned semiconductor regions and a plurality of MISFETs
US4455565A (en) * 1980-02-22 1984-06-19 Rca Corporation Vertical MOSFET with an aligned gate electrode and aligned drain shield electrode
US4593302A (en) * 1980-08-18 1986-06-03 International Rectifier Corporation Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide
US4680853A (en) * 1980-08-18 1987-07-21 International Rectifier Corporation Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide
JPS57103361A (en) * 1980-10-29 1982-06-26 Siemens Ag Mis controlled semiconductor element
WO1982002981A1 (en) * 1981-02-23 1982-09-02 Inc Motorola Mos power transistor
US4974059A (en) * 1982-12-21 1990-11-27 International Rectifier Corporation Semiconductor high-power mosfet device
JPH0365026B2 (en) * 1987-07-17 1991-10-09
JPS6387771A (en) * 1987-07-17 1988-04-19 Nec Corp Field effect transistor
US5696399A (en) * 1991-11-29 1997-12-09 Sgs-Thomson Microelectronics S.R.L. Process for manufacturing MOS-type integrated circuits
US5663080A (en) * 1991-11-29 1997-09-02 Sgs-Thomson Microelectronics, S.R.L. Process for manufacturing MOS-type integrated circuits
US5798554A (en) * 1995-02-24 1998-08-25 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno MOS-technology power device integrated structure and manufacturing process thereof
US6111297A (en) * 1995-02-24 2000-08-29 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno MOS-technology power device integrated structure and manufacturing process thereof
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices
US6046473A (en) * 1995-06-07 2000-04-04 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of MOS-gated power devices
US6030870A (en) * 1995-10-30 2000-02-29 Sgs-Thomson Microelectronics, S.R.L. High density MOS technology power device
US5985721A (en) * 1995-10-30 1999-11-16 Sgs-Thomson Microelectronics, S.R.L. Single feature size MOS technology power device
US5981343A (en) * 1995-10-30 1999-11-09 Sgs-Thomas Microelectronics, S.R.L. Single feature size mos technology power device
US6054737A (en) * 1995-10-30 2000-04-25 Sgs-Thomson Microelectronics S.R.L. High density MOS technology power device
US6064087A (en) * 1995-10-30 2000-05-16 Sgs-Thomson Microelectronics, S.R.L. Single feature size MOS technology power device
US6228719B1 (en) 1995-11-06 2001-05-08 Stmicroelectronics S.R.L. MOS technology power device with low output resistance and low capacitance, and related manufacturing process
US6051862A (en) * 1995-12-28 2000-04-18 Sgs-Thomson Microelectronics S.R.L. MOS-technology power device integrated structure
US5841167A (en) * 1995-12-28 1998-11-24 Sgs-Thomson Microelectronics S.R.L. MOS-technology power device integrated structure
US6492691B2 (en) 1998-05-26 2002-12-10 Stmicroelectronics S.R.L. High integration density MOS technology power device structure
JP2014140082A (en) * 2014-05-07 2014-07-31 Rohm Co Ltd Semiconductor device and method for manufacturing the same

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