GB1406391A - Inverter circuit arrangements - Google Patents

Inverter circuit arrangements

Info

Publication number
GB1406391A
GB1406391A GB791073A GB791073A GB1406391A GB 1406391 A GB1406391 A GB 1406391A GB 791073 A GB791073 A GB 791073A GB 791073 A GB791073 A GB 791073A GB 1406391 A GB1406391 A GB 1406391A
Authority
GB
United Kingdom
Prior art keywords
inverter circuit
feb
circuit arrangements
division
ferranti
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB791073A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ferranti International PLC
Original Assignee
Ferranti PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ferranti PLC filed Critical Ferranti PLC
Priority to GB791073A priority Critical patent/GB1406391A/en
Publication of GB1406391A publication Critical patent/GB1406391A/en
Priority to US05/658,403 priority patent/US4069494A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/013—Modifications for accelerating switching in bipolar transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

1406391 Integrated circuits FERRANTI Ltd 18 Feb 1974 [17 Feb 1973] 7910/73 Heading H1K [Also in Division H3] A logic inverter circuit (see Division H3) comprises a field effect transistor 11 and a bipolar transistor 10 formed on a single chip, with the gate electrode 57 and base electrode 45, 46 connected to an input terminal 65 and the source 56 and collector 52 connected to the output. As described the F.E.T. is a junction F.E.T., but an insulated gate type may be used. The input circuit may include one or more diodes and a number of stages may be combined to perform a logic function.
GB791073A 1973-02-17 1973-02-17 Inverter circuit arrangements Expired GB1406391A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB791073A GB1406391A (en) 1973-02-17 1973-02-17 Inverter circuit arrangements
US05/658,403 US4069494A (en) 1973-02-17 1976-02-17 Inverter circuit arrangements

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB791073A GB1406391A (en) 1973-02-17 1973-02-17 Inverter circuit arrangements

Publications (1)

Publication Number Publication Date
GB1406391A true GB1406391A (en) 1975-09-17

Family

ID=9842157

Family Applications (1)

Application Number Title Priority Date Filing Date
GB791073A Expired GB1406391A (en) 1973-02-17 1973-02-17 Inverter circuit arrangements

Country Status (1)

Country Link
GB (1) GB1406391A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2596202A1 (en) * 1986-03-21 1987-09-25 Sgs Microelettronica Spa NPN TRANSISTOR STRUCTURE EQUIVALENT WITH HIGHER CLAMPING VOLTAGE THAN INTRINSIC CLAMP VOLTAGE OF NPN TRANSISTORS
GB2192319A (en) * 1986-07-02 1988-01-06 Plessey Co Plc Logic circuits

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2596202A1 (en) * 1986-03-21 1987-09-25 Sgs Microelettronica Spa NPN TRANSISTOR STRUCTURE EQUIVALENT WITH HIGHER CLAMPING VOLTAGE THAN INTRINSIC CLAMP VOLTAGE OF NPN TRANSISTORS
GB2192319A (en) * 1986-07-02 1988-01-06 Plessey Co Plc Logic circuits

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee