JPS5333071A - Complementary type insulated gate semiconductor circuit - Google Patents

Complementary type insulated gate semiconductor circuit

Info

Publication number
JPS5333071A
JPS5333071A JP10807176A JP10807176A JPS5333071A JP S5333071 A JPS5333071 A JP S5333071A JP 10807176 A JP10807176 A JP 10807176A JP 10807176 A JP10807176 A JP 10807176A JP S5333071 A JPS5333071 A JP S5333071A
Authority
JP
Japan
Prior art keywords
insulated gate
semiconductor circuit
gate semiconductor
complementary type
type insulated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10807176A
Other languages
Japanese (ja)
Other versions
JPS5931864B2 (en
Inventor
Michitoku Kamatani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP51108071A priority Critical patent/JPS5931864B2/en
Publication of JPS5333071A publication Critical patent/JPS5333071A/en
Publication of JPS5931864B2 publication Critical patent/JPS5931864B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention

Abstract

PURPOSE:To obtain a C-IGFET free from latch-up and false operation in internal circuits by so arranging the circuits that PN junction diodes become of reverse voltage and parasitic bipolar transistors are non-conducting with respect to the input voltage above a supply voltage.
JP51108071A 1976-09-09 1976-09-09 Complementary insulated gate semiconductor circuit Expired JPS5931864B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51108071A JPS5931864B2 (en) 1976-09-09 1976-09-09 Complementary insulated gate semiconductor circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51108071A JPS5931864B2 (en) 1976-09-09 1976-09-09 Complementary insulated gate semiconductor circuit

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP60108054A Division JPS61198661A (en) 1985-05-20 1985-05-20 Complementary insulated gate semiconductor circuit

Publications (2)

Publication Number Publication Date
JPS5333071A true JPS5333071A (en) 1978-03-28
JPS5931864B2 JPS5931864B2 (en) 1984-08-04

Family

ID=14475134

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51108071A Expired JPS5931864B2 (en) 1976-09-09 1976-09-09 Complementary insulated gate semiconductor circuit

Country Status (1)

Country Link
JP (1) JPS5931864B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54152852A (en) * 1978-05-23 1979-12-01 Matsushita Electric Ind Co Ltd Semiconductor circuit
JPS5587391A (en) * 1978-12-22 1980-07-02 Hitachi Ltd Semiconductor memory circuit device
JPS5896762A (en) * 1981-12-03 1983-06-08 Mitsubishi Electric Corp Semiconductor element
JPS6062149A (en) * 1983-09-14 1985-04-10 Nec Kansai Ltd Semiconductor device
JPS6062150A (en) * 1983-09-14 1985-04-10 Nec Kansai Ltd Semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54152852A (en) * 1978-05-23 1979-12-01 Matsushita Electric Ind Co Ltd Semiconductor circuit
JPS5587391A (en) * 1978-12-22 1980-07-02 Hitachi Ltd Semiconductor memory circuit device
JPS6135635B2 (en) * 1978-12-22 1986-08-14 Hitachi Ltd
JPS5896762A (en) * 1981-12-03 1983-06-08 Mitsubishi Electric Corp Semiconductor element
JPS6062149A (en) * 1983-09-14 1985-04-10 Nec Kansai Ltd Semiconductor device
JPS6062150A (en) * 1983-09-14 1985-04-10 Nec Kansai Ltd Semiconductor device

Also Published As

Publication number Publication date
JPS5931864B2 (en) 1984-08-04

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