JPS54152852A - Semiconductor circuit - Google Patents

Semiconductor circuit

Info

Publication number
JPS54152852A
JPS54152852A JP6197678A JP6197678A JPS54152852A JP S54152852 A JPS54152852 A JP S54152852A JP 6197678 A JP6197678 A JP 6197678A JP 6197678 A JP6197678 A JP 6197678A JP S54152852 A JPS54152852 A JP S54152852A
Authority
JP
Japan
Prior art keywords
signal phi
current control
transistor
power
conduction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6197678A
Other languages
Japanese (ja)
Inventor
Takashi Osone
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP6197678A priority Critical patent/JPS54152852A/en
Publication of JPS54152852A publication Critical patent/JPS54152852A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09448Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET in combination with bipolar transistors [BIMOS]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To reduce greatly the power consumption at the non-operation time by applying the current control signals to the base terminal of the current control bipolar transistor to control the conduction and non-conduction of the transistor. CONSTITUTION:In the inverter circuit featuring the power-down function obtained through combination of npn-type dipolar transistor Tr11 and N-channel MOSTr12, current control signal phi is applied to base terminal 12 of Tr11. Thus, inverse output V0of input voltage V1 is obtained when signal phi is ''H'', and consumption current ICC' flows only when V1 is ''H''. On the other hand, signal phi is turned to ''L'' to make Tr11 non-conducting (non-operation time and power-down state), and thus current ICC becomes zero. Also, in this case, Tr11 is non-conducting, and accordingly V0 turns to ''L'' when V1 is ''H'' and both Tr11 and 12 become non-conductive when V1 is ''L''. As a result, VO features a high impedance with no normal output obtained.
JP6197678A 1978-05-23 1978-05-23 Semiconductor circuit Pending JPS54152852A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6197678A JPS54152852A (en) 1978-05-23 1978-05-23 Semiconductor circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6197678A JPS54152852A (en) 1978-05-23 1978-05-23 Semiconductor circuit

Publications (1)

Publication Number Publication Date
JPS54152852A true JPS54152852A (en) 1979-12-01

Family

ID=13186711

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6197678A Pending JPS54152852A (en) 1978-05-23 1978-05-23 Semiconductor circuit

Country Status (1)

Country Link
JP (1) JPS54152852A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5298961A (en) * 1976-02-16 1977-08-19 Toshiba Corp Circuit power source control system of semi-conductor ic element
JPS5333071A (en) * 1976-09-09 1978-03-28 Nec Corp Complementary type insulated gate semiconductor circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5298961A (en) * 1976-02-16 1977-08-19 Toshiba Corp Circuit power source control system of semi-conductor ic element
JPS5333071A (en) * 1976-09-09 1978-03-28 Nec Corp Complementary type insulated gate semiconductor circuit

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