JPS54152852A - Semiconductor circuit - Google Patents
Semiconductor circuitInfo
- Publication number
- JPS54152852A JPS54152852A JP6197678A JP6197678A JPS54152852A JP S54152852 A JPS54152852 A JP S54152852A JP 6197678 A JP6197678 A JP 6197678A JP 6197678 A JP6197678 A JP 6197678A JP S54152852 A JPS54152852 A JP S54152852A
- Authority
- JP
- Japan
- Prior art keywords
- signal phi
- current control
- transistor
- power
- conduction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
- H03K19/09448—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET in combination with bipolar transistors [BIMOS]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Electronic Switches (AREA)
- Logic Circuits (AREA)
Abstract
PURPOSE:To reduce greatly the power consumption at the non-operation time by applying the current control signals to the base terminal of the current control bipolar transistor to control the conduction and non-conduction of the transistor. CONSTITUTION:In the inverter circuit featuring the power-down function obtained through combination of npn-type dipolar transistor Tr11 and N-channel MOSTr12, current control signal phi is applied to base terminal 12 of Tr11. Thus, inverse output V0of input voltage V1 is obtained when signal phi is ''H'', and consumption current ICC' flows only when V1 is ''H''. On the other hand, signal phi is turned to ''L'' to make Tr11 non-conducting (non-operation time and power-down state), and thus current ICC becomes zero. Also, in this case, Tr11 is non-conducting, and accordingly V0 turns to ''L'' when V1 is ''H'' and both Tr11 and 12 become non-conductive when V1 is ''L''. As a result, VO features a high impedance with no normal output obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6197678A JPS54152852A (en) | 1978-05-23 | 1978-05-23 | Semiconductor circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6197678A JPS54152852A (en) | 1978-05-23 | 1978-05-23 | Semiconductor circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54152852A true JPS54152852A (en) | 1979-12-01 |
Family
ID=13186711
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6197678A Pending JPS54152852A (en) | 1978-05-23 | 1978-05-23 | Semiconductor circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54152852A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5298961A (en) * | 1976-02-16 | 1977-08-19 | Toshiba Corp | Circuit power source control system of semi-conductor ic element |
JPS5333071A (en) * | 1976-09-09 | 1978-03-28 | Nec Corp | Complementary type insulated gate semiconductor circuit |
-
1978
- 1978-05-23 JP JP6197678A patent/JPS54152852A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5298961A (en) * | 1976-02-16 | 1977-08-19 | Toshiba Corp | Circuit power source control system of semi-conductor ic element |
JPS5333071A (en) * | 1976-09-09 | 1978-03-28 | Nec Corp | Complementary type insulated gate semiconductor circuit |
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