JPS5776916A - Output circuit - Google Patents
Output circuitInfo
- Publication number
- JPS5776916A JPS5776916A JP55152587A JP15258780A JPS5776916A JP S5776916 A JPS5776916 A JP S5776916A JP 55152587 A JP55152587 A JP 55152587A JP 15258780 A JP15258780 A JP 15258780A JP S5776916 A JPS5776916 A JP S5776916A
- Authority
- JP
- Japan
- Prior art keywords
- power supply
- potential
- terminal
- resistor
- turned
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
- H03K19/0948—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Manipulation Of Pulses (AREA)
- Logic Circuits (AREA)
Abstract
PURPOSE:To obtain an arbitrary output amplitude, by inserting a diode in forward between drains of a CMOSFET and connecting a pull-up resistor between a cathode and power supply terminal of the diode. CONSTITUTION:When an H level is applied to an input terminal, a transistor (TR) 30 is turned off and a TR31 is turned on, and a current flows to the TR31 from a pull-up power supply terminal 38 via a resistor 35. In this case, the potential at an output terminal 34 can be made almost the same potential as the low potential of the power supply, by making greater the resistance value of a resistor 35 than an on-resistance of the TR31 sufficiently. When an input terminal 33 is at L level, the TR30 is turned on and the TR31 is turned off, and the potential 38 is outputted to the output terminal 34. Without the resistor 35, the potential of the terminal 34 is the potential of the power supply 36. If the pull-up power supply is lower than the power supply 36, a diode 40 is provided and the anode side is taken as an output terminal 41.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55152587A JPS5776916A (en) | 1980-10-30 | 1980-10-30 | Output circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55152587A JPS5776916A (en) | 1980-10-30 | 1980-10-30 | Output circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5776916A true JPS5776916A (en) | 1982-05-14 |
Family
ID=15543711
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55152587A Pending JPS5776916A (en) | 1980-10-30 | 1980-10-30 | Output circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5776916A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6264122A (en) * | 1985-09-13 | 1987-03-23 | Nec Corp | Driver circuit |
JPS62161755U (en) * | 1986-04-02 | 1987-10-14 | ||
JPH01114117A (en) * | 1987-10-27 | 1989-05-02 | Mitsubishi Electric Corp | Cmos output buffer circuit |
EP4156269A1 (en) * | 2021-09-22 | 2023-03-29 | INTEL Corporation | Vertical diodes in stacked transistor technologies |
-
1980
- 1980-10-30 JP JP55152587A patent/JPS5776916A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6264122A (en) * | 1985-09-13 | 1987-03-23 | Nec Corp | Driver circuit |
JPS62161755U (en) * | 1986-04-02 | 1987-10-14 | ||
JPH01114117A (en) * | 1987-10-27 | 1989-05-02 | Mitsubishi Electric Corp | Cmos output buffer circuit |
EP4156269A1 (en) * | 2021-09-22 | 2023-03-29 | INTEL Corporation | Vertical diodes in stacked transistor technologies |
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