JPS55112037A - Static type mos circuit - Google Patents
Static type mos circuitInfo
- Publication number
- JPS55112037A JPS55112037A JP1717979A JP1717979A JPS55112037A JP S55112037 A JPS55112037 A JP S55112037A JP 1717979 A JP1717979 A JP 1717979A JP 1717979 A JP1717979 A JP 1717979A JP S55112037 A JPS55112037 A JP S55112037A
- Authority
- JP
- Japan
- Prior art keywords
- fetq3
- high level
- input signal
- source
- signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/096—Synchronous circuits, i.e. using clock signals
Abstract
PURPOSE:To obtain a static type MOS circuit which operates on the input signal of a small amplitude, by connecting the 2nd transistor receiving application of the input signal to the source of the 1st transistor receiving application of the power- down control signal. CONSTITUTION:Input signal IN to be applied to the gate of 2nd enhancement-type MOSFETQ3 is set to a high level while chip selection signal CS to be applied to the gate of 1st enhancement-type MOSFETQ2 is kept at a high level. Thus FETQ3 becomes conductive with output OUT turned to a low level. While in case signal IN is set to a low level, FETQ3 becomes nonconductive with OUT turned to a high level to secure the function as an inverter. At this moment, the source of FETQ3 is connected directly to power source VSS via no other element. Thus no voltage drop is caused between VSS and the source of FETQ3. And for the high level of the input signal, the allowable minimum threshold value of FETQ3 will do enough.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1717979A JPS55112037A (en) | 1979-02-19 | 1979-02-19 | Static type mos circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1717979A JPS55112037A (en) | 1979-02-19 | 1979-02-19 | Static type mos circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55112037A true JPS55112037A (en) | 1980-08-29 |
Family
ID=11936713
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1717979A Pending JPS55112037A (en) | 1979-02-19 | 1979-02-19 | Static type mos circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55112037A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5979493A (en) * | 1982-10-29 | 1984-05-08 | Hitachi Micro Comput Eng Ltd | Eprom device |
JPH03116495A (en) * | 1990-06-01 | 1991-05-17 | Hitachi Micro Comput Eng Ltd | Eprom device |
-
1979
- 1979-02-19 JP JP1717979A patent/JPS55112037A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5979493A (en) * | 1982-10-29 | 1984-05-08 | Hitachi Micro Comput Eng Ltd | Eprom device |
JPH0136200B2 (en) * | 1982-10-29 | 1989-07-28 | Hitachi Maikuro Konpyuuta Enjiniaringu Kk | |
JPH03116495A (en) * | 1990-06-01 | 1991-05-17 | Hitachi Micro Comput Eng Ltd | Eprom device |
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