JPS5735422A - Semiconductor circuit - Google Patents

Semiconductor circuit

Info

Publication number
JPS5735422A
JPS5735422A JP11091280A JP11091280A JPS5735422A JP S5735422 A JPS5735422 A JP S5735422A JP 11091280 A JP11091280 A JP 11091280A JP 11091280 A JP11091280 A JP 11091280A JP S5735422 A JPS5735422 A JP S5735422A
Authority
JP
Japan
Prior art keywords
terminal
signal
power supply
diode
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11091280A
Other languages
Japanese (ja)
Other versions
JPH0311127B2 (en
Inventor
Hiroshi Iwahashi
Masamichi Asano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11091280A priority Critical patent/JPS5735422A/en
Publication of JPS5735422A publication Critical patent/JPS5735422A/en
Publication of JPH0311127B2 publication Critical patent/JPH0311127B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches

Landscapes

  • Electronic Switches (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Read Only Memory (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To achieve a sufficiently high voltage at an output terminal, by using a diode for an element which leads a high voltage given at a signal and power supply terminal to an output terminal. CONSTITUTION:When a signal and power supply terminal (b) is used as a signal terminal, if a signal B is taken as 1, the size of each transistor can be set so that the potential at a terminal (a) can be kept near a power supply voltage Vc independently of 1.0 of a signal A. In this case, almost no current flows via a diode 31 until the diode 31 breaks down to the potential VF+ potential at terminal (a) at the terminal (b), and the terminal (b) can be used as a signal line. On the other hand, when the terminal (b) is used for the power supply, the signal B is taken as 0, a MOSFET4 is cut off, and a current from a high power supply VP to a lower power supply VC does not flow. In this case, a sufficiently higher voltage being VP-VF can be obtained at an output terminal O.
JP11091280A 1980-08-12 1980-08-12 Semiconductor circuit Granted JPS5735422A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11091280A JPS5735422A (en) 1980-08-12 1980-08-12 Semiconductor circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11091280A JPS5735422A (en) 1980-08-12 1980-08-12 Semiconductor circuit

Publications (2)

Publication Number Publication Date
JPS5735422A true JPS5735422A (en) 1982-02-26
JPH0311127B2 JPH0311127B2 (en) 1991-02-15

Family

ID=14547782

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11091280A Granted JPS5735422A (en) 1980-08-12 1980-08-12 Semiconductor circuit

Country Status (1)

Country Link
JP (1) JPS5735422A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5954100A (en) * 1982-08-17 1984-03-28 ウエスチングハウス　エレクトリック　コ−ポレ−ション Permanent type memory
JPS6050697A (en) * 1983-08-30 1985-03-20 Toshiba Corp Semiconductor integrated circuit
JPS612050A (en) * 1984-04-02 1986-01-08 ザ　ダウ　ケミカル　カンパニ− Combination heat-quantity analyzer and x-ray diffractometer
JPS6161295A (en) * 1984-08-31 1986-03-29 Fujitsu Ltd Semiconductor memory

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5379365A (en) * 1976-12-23 1978-07-13 Nec Corp Capacitive load driving unit
JPS5423204A (en) * 1977-07-21 1979-02-21 Sato Yoshio Fluid pump

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5379365A (en) * 1976-12-23 1978-07-13 Nec Corp Capacitive load driving unit
JPS5423204A (en) * 1977-07-21 1979-02-21 Sato Yoshio Fluid pump

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5954100A (en) * 1982-08-17 1984-03-28 ウエスチングハウス　エレクトリック　コ−ポレ−ション Permanent type memory
JPH0587919B2 (en) * 1982-08-17 1993-12-20 Westinghouse Electric Corp
JPS6050697A (en) * 1983-08-30 1985-03-20 Toshiba Corp Semiconductor integrated circuit
JPH0527195B2 (en) * 1983-08-30 1993-04-20 Toshiba Kk
JPS612050A (en) * 1984-04-02 1986-01-08 ザ　ダウ　ケミカル　カンパニ− Combination heat-quantity analyzer and x-ray diffractometer
JPH0548415B2 (en) * 1984-04-02 1993-07-21 Dow Chemical Co
JPS6161295A (en) * 1984-08-31 1986-03-29 Fujitsu Ltd Semiconductor memory
JPH059880B2 (en) * 1984-08-31 1993-02-08 Fujitsu Ltd

Also Published As

Publication number Publication date
JPH0311127B2 (en) 1991-02-15

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