JPS5593322A - Alternating current switch circuit - Google Patents

Alternating current switch circuit

Info

Publication number
JPS5593322A
JPS5593322A JP152879A JP152879A JPS5593322A JP S5593322 A JPS5593322 A JP S5593322A JP 152879 A JP152879 A JP 152879A JP 152879 A JP152879 A JP 152879A JP S5593322 A JPS5593322 A JP S5593322A
Authority
JP
Japan
Prior art keywords
signal
gate
source
switch circuit
bias
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP152879A
Other languages
Japanese (ja)
Inventor
Tadaharu Uchino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP152879A priority Critical patent/JPS5593322A/en
Publication of JPS5593322A publication Critical patent/JPS5593322A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors

Landscapes

  • Electronic Switches (AREA)

Abstract

PURPOSE:To simplify the bias power supply, by obtaining the bias source of the AC signal switch circuit from the input AC signal. CONSTITUTION:Transient voltage is given to the ON contact 2 of the selector switch 23 via the capacitor 26 and resistor 22 at positive half cycle l1 from the AC signal source 1. As a result, a negative voltage not being cut off to the source is fed to the gate of N-type FET 21 to keep conductive state. When negative half cycle l2 is inputted, the gate of N-type FET21 is always biased to positive to keep conduction. Further, the bias voltage changes with the input AC signal in the range not being cut off at all times. Further, if non-conduction is desired, the selector switch 23 selected to the contact 1 and sufficient value of negative power supply 24 is connected to the gate.
JP152879A 1979-01-09 1979-01-09 Alternating current switch circuit Pending JPS5593322A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP152879A JPS5593322A (en) 1979-01-09 1979-01-09 Alternating current switch circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP152879A JPS5593322A (en) 1979-01-09 1979-01-09 Alternating current switch circuit

Publications (1)

Publication Number Publication Date
JPS5593322A true JPS5593322A (en) 1980-07-15

Family

ID=11504005

Family Applications (1)

Application Number Title Priority Date Filing Date
JP152879A Pending JPS5593322A (en) 1979-01-09 1979-01-09 Alternating current switch circuit

Country Status (1)

Country Link
JP (1) JPS5593322A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4431871A (en) * 1982-01-21 1984-02-14 Northern Telecom Limited Solid state relay
US5134321A (en) * 1991-01-23 1992-07-28 Harris Corporation Power MOSFET AC power switch employing means for preventing conduction of body diode
DE102004027361A1 (en) * 2004-06-04 2005-12-29 Rohde & Schwarz Gmbh & Co. Kg High-frequency switch for attenuator, has field effect transistor with gate terminal coupled to control terminal provided with positive control voltage which is higher than source terminal voltage and less than transistor pinch-off voltage
US8378734B2 (en) * 2002-08-29 2013-02-19 Lg Display Co., Ltd. Method and system for reduction of off-current in field effect transistors

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5039039A (en) * 1973-08-08 1975-04-10

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5039039A (en) * 1973-08-08 1975-04-10

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4431871A (en) * 1982-01-21 1984-02-14 Northern Telecom Limited Solid state relay
US5134321A (en) * 1991-01-23 1992-07-28 Harris Corporation Power MOSFET AC power switch employing means for preventing conduction of body diode
US8378734B2 (en) * 2002-08-29 2013-02-19 Lg Display Co., Ltd. Method and system for reduction of off-current in field effect transistors
US8729953B2 (en) 2002-08-29 2014-05-20 Lg Display Co., Ltd. Method and system for reduction of off-current in field effect transistors
DE102004027361A1 (en) * 2004-06-04 2005-12-29 Rohde & Schwarz Gmbh & Co. Kg High-frequency switch for attenuator, has field effect transistor with gate terminal coupled to control terminal provided with positive control voltage which is higher than source terminal voltage and less than transistor pinch-off voltage
DE102004027361B4 (en) * 2004-06-04 2009-06-10 Rohde & Schwarz Gmbh & Co. Kg High frequency switch with extended amplitude and sound dynamics

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