JPS57107635A - Switching circuit - Google Patents

Switching circuit

Info

Publication number
JPS57107635A
JPS57107635A JP55186437A JP18643780A JPS57107635A JP S57107635 A JPS57107635 A JP S57107635A JP 55186437 A JP55186437 A JP 55186437A JP 18643780 A JP18643780 A JP 18643780A JP S57107635 A JPS57107635 A JP S57107635A
Authority
JP
Japan
Prior art keywords
trq3
trs
capacitor
turns
turn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55186437A
Other languages
Japanese (ja)
Inventor
Shinichi Ito
Yoshio Ogino
Yuichi Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP55186437A priority Critical patent/JPS57107635A/en
Publication of JPS57107635A publication Critical patent/JPS57107635A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for dc voltages or currents

Abstract

PURPOSE:To prevent simultaneous conduction with a positive bias current control transistor (TR), by turning off a thyristor inverse bias current control TR in high speed. CONSTITUTION:When an output of an integrated circuit IC1 is at a high level, TRs Q2, Q4 turn off and a TRQ3 turns on. In this case, a capacitor C1 is charged and a back-bias voltage E2 is applied to a thyristor S. When an output of the integrated circuit IC1 is at a low level, the TRs Q2, Q4 turn on, and since the capacitor C1 is discharged via the TRQ4, an inverse bias is given to the TRQ3 and the TRQ3 turns off in high speed. Thus, simultaneous conduction of the TRs Q1, Q3 never take place.
JP55186437A 1980-12-25 1980-12-25 Switching circuit Pending JPS57107635A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55186437A JPS57107635A (en) 1980-12-25 1980-12-25 Switching circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55186437A JPS57107635A (en) 1980-12-25 1980-12-25 Switching circuit

Publications (1)

Publication Number Publication Date
JPS57107635A true JPS57107635A (en) 1982-07-05

Family

ID=16188425

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55186437A Pending JPS57107635A (en) 1980-12-25 1980-12-25 Switching circuit

Country Status (1)

Country Link
JP (1) JPS57107635A (en)

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