JPS5776925A - Mos type circuit - Google Patents
Mos type circuitInfo
- Publication number
- JPS5776925A JPS5776925A JP55151945A JP15194580A JPS5776925A JP S5776925 A JPS5776925 A JP S5776925A JP 55151945 A JP55151945 A JP 55151945A JP 15194580 A JP15194580 A JP 15194580A JP S5776925 A JPS5776925 A JP S5776925A
- Authority
- JP
- Japan
- Prior art keywords
- mos inverter
- stand
- level
- signal
- terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0008—Arrangements for reducing power consumption
- H03K19/0016—Arrangements for reducing power consumption by using a control or a clock signal, e.g. in order to apply power supply
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Electronic Switches (AREA)
- Logic Circuits (AREA)
Abstract
PURPOSE:To decrease the power consumption at stand-by, by providing an MOSFET between a gate common connecting point of a complementary MOS inverter and input and power supply terminals. CONSTITUTION:The drain of a P channel MOSFETT3 and the drain of an N channel MOSFETT4 are connected to an input terminal 11 of a C-MOS inverter, and the source of the MOSFETT4 is grounded. The gates of the both FETs are connected in common, and a signal of L level is applied at the use of the C-MOS inverter and a signal of H level is applied at stand-by. At stand-by, the FETT3 is nonconductive and the T4 is conductive, and a signal applied to a terminal 13 is not delivered to the input terminal 11 of the C-MOS inverter. In this case, since the terminal 11 is held at L level, an FETT1 is nonconductive and a current flowing to the both FETs does not flow to the C-MOS inverter.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55151945A JPS5776925A (en) | 1980-10-29 | 1980-10-29 | Mos type circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55151945A JPS5776925A (en) | 1980-10-29 | 1980-10-29 | Mos type circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5776925A true JPS5776925A (en) | 1982-05-14 |
Family
ID=15529634
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55151945A Pending JPS5776925A (en) | 1980-10-29 | 1980-10-29 | Mos type circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5776925A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58207726A (en) * | 1982-05-28 | 1983-12-03 | Nec Corp | Semiconductor circuit |
US4698529A (en) * | 1984-05-30 | 1987-10-06 | Fujitsu Limited | Output control circuit to prevent output of initial spike noise |
US4709172A (en) * | 1985-08-19 | 1987-11-24 | Dallas Semiconductor Corporation | Input-voltage detector circuit for CMOS integrated circuit |
JPS63253718A (en) * | 1987-04-09 | 1988-10-20 | Rohm Co Ltd | Gate circuit |
JPH01175412A (en) * | 1987-12-29 | 1989-07-11 | Fujitsu Ltd | Semiconductor integrated circuit |
JPH06325599A (en) * | 1986-06-30 | 1994-11-25 | Samsung Electron Co Ltd | Data transmission circuit |
-
1980
- 1980-10-29 JP JP55151945A patent/JPS5776925A/en active Pending
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58207726A (en) * | 1982-05-28 | 1983-12-03 | Nec Corp | Semiconductor circuit |
US4698529A (en) * | 1984-05-30 | 1987-10-06 | Fujitsu Limited | Output control circuit to prevent output of initial spike noise |
US4709172A (en) * | 1985-08-19 | 1987-11-24 | Dallas Semiconductor Corporation | Input-voltage detector circuit for CMOS integrated circuit |
JPH06325599A (en) * | 1986-06-30 | 1994-11-25 | Samsung Electron Co Ltd | Data transmission circuit |
JPS63253718A (en) * | 1987-04-09 | 1988-10-20 | Rohm Co Ltd | Gate circuit |
JPH0563050B2 (en) * | 1987-04-09 | 1993-09-09 | Rohm Kk | |
JPH01175412A (en) * | 1987-12-29 | 1989-07-11 | Fujitsu Ltd | Semiconductor integrated circuit |
JP2540178B2 (en) * | 1987-12-29 | 1996-10-02 | 富士通株式会社 | Semiconductor integrated circuit |
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