JPS57190351A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS57190351A
JPS57190351A JP56075889A JP7588981A JPS57190351A JP S57190351 A JPS57190351 A JP S57190351A JP 56075889 A JP56075889 A JP 56075889A JP 7588981 A JP7588981 A JP 7588981A JP S57190351 A JPS57190351 A JP S57190351A
Authority
JP
Japan
Prior art keywords
electric power
power source
saved
make
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56075889A
Other languages
Japanese (ja)
Other versions
JPS6239516B2 (en
Inventor
Tsuneo Kawada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56075889A priority Critical patent/JPS57190351A/en
Publication of JPS57190351A publication Critical patent/JPS57190351A/en
Publication of JPS6239516B2 publication Critical patent/JPS6239516B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Sources (AREA)
  • Static Random-Access Memory (AREA)
  • Microcomputers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To reduce remarkably consuming electric power when power is to be saved at a C-MOS circuit device using single electric power source by a method wherein in the power having saving period, a FET to cut a current flowing into an external circuit from an input terminal or from an output terminal is inserted. CONSTITUTION:A P type channel MOS element Tr2, a load resistor R, an N type channel MOS element Tr1 are inserted in series between an electric power source VCC and the earth point. The element Tr1 and the resistor R function as an inverter, and make a supplied signal to the input terminal 13 to be reversed and to be outputted from the output terminal OUT. At normal operation, an ''L'' signal is applied to the input terminal on the gate side of the element Tr2 to make the element Tr2 to ON, and when power is to be saved, an ''H'' signal is applied to the terminal PS to make to OFF, and the electric power source current fed from the electric power source VCC is obstructed. By this output circuit, because the power source current flowed always in the external circuit at the traditional circuit can be cut when power is to be saved, consuming electric power can be reduced.
JP56075889A 1981-05-20 1981-05-20 Semiconductor integrated circuit device Granted JPS57190351A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56075889A JPS57190351A (en) 1981-05-20 1981-05-20 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56075889A JPS57190351A (en) 1981-05-20 1981-05-20 Semiconductor integrated circuit device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP62067215A Division JPS62259292A (en) 1987-03-20 1987-03-20 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS57190351A true JPS57190351A (en) 1982-11-22
JPS6239516B2 JPS6239516B2 (en) 1987-08-24

Family

ID=13589317

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56075889A Granted JPS57190351A (en) 1981-05-20 1981-05-20 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS57190351A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS629825U (en) * 1985-07-04 1987-01-21
JPS6289048U (en) * 1985-11-20 1987-06-06
JPS62251817A (en) * 1986-04-24 1987-11-02 Matsushita Electric Works Ltd Microcomputer battery backup circuit
JPH07177015A (en) * 1993-12-17 1995-07-14 Nec Corp Power cut circuit for synchronous type semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS629825U (en) * 1985-07-04 1987-01-21
JPH0449706Y2 (en) * 1985-07-04 1992-11-24
JPS6289048U (en) * 1985-11-20 1987-06-06
JPS62251817A (en) * 1986-04-24 1987-11-02 Matsushita Electric Works Ltd Microcomputer battery backup circuit
JPH07177015A (en) * 1993-12-17 1995-07-14 Nec Corp Power cut circuit for synchronous type semiconductor device

Also Published As

Publication number Publication date
JPS6239516B2 (en) 1987-08-24

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