JPS5781621A - Current source - Google Patents
Current sourceInfo
- Publication number
- JPS5781621A JPS5781621A JP15651180A JP15651180A JPS5781621A JP S5781621 A JPS5781621 A JP S5781621A JP 15651180 A JP15651180 A JP 15651180A JP 15651180 A JP15651180 A JP 15651180A JP S5781621 A JPS5781621 A JP S5781621A
- Authority
- JP
- Japan
- Prior art keywords
- source
- fet13
- gate
- type
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
Abstract
PURPOSE:To obtain a current source of high output resistance, by connecting the drain and the gate of the second MOSFET to the source of the first MOSFET where a DC voltage is applied to the gate. CONSTITUTION:A D type MOSFET11 and an E type MOSFET12 are connected in series between power sources 10 and 20 to constitute a bias circuit. An output voltage 15 of the bias circuit is connected to the gate of an E type MOSFET13, and the drain of the FET13 becomes an output terminal 30. An E type MOSFET 14 where the gate is connected to the drain is connected between the source of the FET13 and the power source 20. When the voltage of the output terminal 30 becomes higher, the current of the FET13 tries to rise by the channel length modulation effect; however, the voltage drop of the FET14 is increased, and the source potential of the FET13 rises to suppress the increment of the current.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15651180A JPS5781621A (en) | 1980-11-07 | 1980-11-07 | Current source |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15651180A JPS5781621A (en) | 1980-11-07 | 1980-11-07 | Current source |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5781621A true JPS5781621A (en) | 1982-05-21 |
Family
ID=15629363
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15651180A Pending JPS5781621A (en) | 1980-11-07 | 1980-11-07 | Current source |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5781621A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011004457A1 (en) * | 2009-07-07 | 2011-01-13 | 富士通株式会社 | Constant current circuit and semiconductor integrated circuit |
-
1980
- 1980-11-07 JP JP15651180A patent/JPS5781621A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011004457A1 (en) * | 2009-07-07 | 2011-01-13 | 富士通株式会社 | Constant current circuit and semiconductor integrated circuit |
JP5310856B2 (en) * | 2009-07-07 | 2013-10-09 | 富士通株式会社 | Constant current circuit and semiconductor integrated circuit |
US8575999B2 (en) | 2009-07-07 | 2013-11-05 | Fujitsu Limited | Constant current circuit and semiconductor integrated circuit |
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