JPS5781621A - Current source - Google Patents

Current source

Info

Publication number
JPS5781621A
JPS5781621A JP15651180A JP15651180A JPS5781621A JP S5781621 A JPS5781621 A JP S5781621A JP 15651180 A JP15651180 A JP 15651180A JP 15651180 A JP15651180 A JP 15651180A JP S5781621 A JPS5781621 A JP S5781621A
Authority
JP
Japan
Prior art keywords
source
fet13
gate
type
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15651180A
Other languages
Japanese (ja)
Inventor
Tsutomu Ishihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15651180A priority Critical patent/JPS5781621A/en
Publication of JPS5781621A publication Critical patent/JPS5781621A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is dc
    • G05F3/10Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only

Abstract

PURPOSE:To obtain a current source of high output resistance, by connecting the drain and the gate of the second MOSFET to the source of the first MOSFET where a DC voltage is applied to the gate. CONSTITUTION:A D type MOSFET11 and an E type MOSFET12 are connected in series between power sources 10 and 20 to constitute a bias circuit. An output voltage 15 of the bias circuit is connected to the gate of an E type MOSFET13, and the drain of the FET13 becomes an output terminal 30. An E type MOSFET 14 where the gate is connected to the drain is connected between the source of the FET13 and the power source 20. When the voltage of the output terminal 30 becomes higher, the current of the FET13 tries to rise by the channel length modulation effect; however, the voltage drop of the FET14 is increased, and the source potential of the FET13 rises to suppress the increment of the current.
JP15651180A 1980-11-07 1980-11-07 Current source Pending JPS5781621A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15651180A JPS5781621A (en) 1980-11-07 1980-11-07 Current source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15651180A JPS5781621A (en) 1980-11-07 1980-11-07 Current source

Publications (1)

Publication Number Publication Date
JPS5781621A true JPS5781621A (en) 1982-05-21

Family

ID=15629363

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15651180A Pending JPS5781621A (en) 1980-11-07 1980-11-07 Current source

Country Status (1)

Country Link
JP (1) JPS5781621A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011004457A1 (en) * 2009-07-07 2011-01-13 富士通株式会社 Constant current circuit and semiconductor integrated circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011004457A1 (en) * 2009-07-07 2011-01-13 富士通株式会社 Constant current circuit and semiconductor integrated circuit
JP5310856B2 (en) * 2009-07-07 2013-10-09 富士通株式会社 Constant current circuit and semiconductor integrated circuit
US8575999B2 (en) 2009-07-07 2013-11-05 Fujitsu Limited Constant current circuit and semiconductor integrated circuit

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