SE8903763L - BISTABLE INTEGRATED SEMICONDUCTOR CIRCUIT - Google Patents

BISTABLE INTEGRATED SEMICONDUCTOR CIRCUIT

Info

Publication number
SE8903763L
SE8903763L SE8903763A SE8903763A SE8903763L SE 8903763 L SE8903763 L SE 8903763L SE 8903763 A SE8903763 A SE 8903763A SE 8903763 A SE8903763 A SE 8903763A SE 8903763 L SE8903763 L SE 8903763L
Authority
SE
Sweden
Prior art keywords
transistors
type
connection
conducting
circuit
Prior art date
Application number
SE8903763A
Other languages
Unknown language ( )
Swedish (sv)
Other versions
SE8903763D0 (en
SE464950B (en
Inventor
Per Svedberg
Original Assignee
Asea Brown Boveri
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asea Brown Boveri filed Critical Asea Brown Boveri
Priority to SE8903763A priority Critical patent/SE464950B/en
Publication of SE8903763D0 publication Critical patent/SE8903763D0/en
Priority to PCT/SE1990/000695 priority patent/WO1991007781A1/en
Priority to AU67575/90A priority patent/AU6757590A/en
Publication of SE8903763L publication Critical patent/SE8903763L/en
Publication of SE464950B publication Critical patent/SE464950B/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H10B10/125—Static random access memory [SRAM] devices comprising a MOSFET load element the MOSFET being a thin film transistor [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element

Landscapes

  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

A bistable integrated semiconductor circuit has four field effect transistors (1, 2, 3, 4), two (1, 2) of P-type and two (3, 4) of N-type. The circuit has connections (5, 6) for a supply voltage between which the transistors are series-connected in pairs, each series connection comprising one P-type transistor and one N-type transistor. The points of connection of the transistors are connected to signal connections (7, 8). The transistors of P-type (1, 2) are connected to the positive supply connection (5) and the transistors (3, 4) of the N-type are connected to the negative supply connection (6). The two transistors (1, 2) of P-type are arranged at different levels and separated by a thin electrically insulating layer. That main region (13 and 23, respectively) of each transistor, which is connected to a signal connection, overlaps the channel region (25 and 15, respectively) of the other transistor. The two transistors of N-type are arranged in a corresponding way. By applying a positive voltage to a signal connection (7), the circuit is brought to assume one of its two stable positions with the transistors (1 and 4) conducting and the transistors (2 and 3) non-conducting. By applying a negative voltage to a signal connection, the circuit is brought to change to the second of its two stable positions, with the transistors (2 and 3) conducting and the transistors (1 and 4) non-conducting.
SE8903763A 1989-11-09 1989-11-09 BISTABLE INTEGRATED SEMICONDUCTOR CIRCUIT SE464950B (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
SE8903763A SE464950B (en) 1989-11-09 1989-11-09 BISTABLE INTEGRATED SEMICONDUCTOR CIRCUIT
PCT/SE1990/000695 WO1991007781A1 (en) 1989-11-09 1990-10-26 Bistable integrated semiconductor circuit
AU67575/90A AU6757590A (en) 1989-11-09 1990-10-26 Bistable integrated semiconductor circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE8903763A SE464950B (en) 1989-11-09 1989-11-09 BISTABLE INTEGRATED SEMICONDUCTOR CIRCUIT

Publications (3)

Publication Number Publication Date
SE8903763D0 SE8903763D0 (en) 1989-11-09
SE8903763L true SE8903763L (en) 1991-05-10
SE464950B SE464950B (en) 1991-07-01

Family

ID=20377434

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8903763A SE464950B (en) 1989-11-09 1989-11-09 BISTABLE INTEGRATED SEMICONDUCTOR CIRCUIT

Country Status (3)

Country Link
AU (1) AU6757590A (en)
SE (1) SE464950B (en)
WO (1) WO1991007781A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE513284C2 (en) * 1996-07-26 2000-08-14 Ericsson Telefon Ab L M Semiconductor component with linear current-to-voltage characteristics

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3685026D1 (en) * 1986-07-09 1992-05-27 Itt Ind Gmbh Deutsche CLOCKED CMOS SWITCHING WITH AT LEAST ONE CMOS SWITCH.
SE460448B (en) * 1988-02-29 1989-10-09 Asea Brown Boveri DOUBLE DIRECT MOS SWITCH

Also Published As

Publication number Publication date
WO1991007781A1 (en) 1991-05-30
SE8903763D0 (en) 1989-11-09
AU6757590A (en) 1991-06-13
SE464950B (en) 1991-07-01

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