JPS5631227A - Analogue gate circuit - Google Patents

Analogue gate circuit

Info

Publication number
JPS5631227A
JPS5631227A JP10696679A JP10696679A JPS5631227A JP S5631227 A JPS5631227 A JP S5631227A JP 10696679 A JP10696679 A JP 10696679A JP 10696679 A JP10696679 A JP 10696679A JP S5631227 A JPS5631227 A JP S5631227A
Authority
JP
Japan
Prior art keywords
resistance
gate
fet
gata
cutoff
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10696679A
Other languages
Japanese (ja)
Inventor
Noriyuki Kutsuwada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10696679A priority Critical patent/JPS5631227A/en
Publication of JPS5631227A publication Critical patent/JPS5631227A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6877—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit

Landscapes

  • Electronic Switches (AREA)

Abstract

PURPOSE:To improve the distortion rate of an analogue gate circuit,by providing the resistance, which connects the gate of a junction type field effect transistor and the conductive-side power source, so that a gate current is flowed slightly in the transition from cutoff to conduction. CONSTITUTION:Transistor TR1 where a driving signal is applied has the collector connected to not only negative power souce-V1 through resistance R1 but also gate G of junction type field effect transistor (J-FET) TR2 through the parallel circuit of diode D1 and capacitor C1. The gata of J-FET TR2 and conductive-side power source +VCC2 are connected by resistance RG, and the time constant determind by resistance RG and capacitor C1 is so selected that PN junction between the gata and the drain of J-FET TR2 may be biased forward to flow the gate current slightly in the transition from cutoff to conduction.
JP10696679A 1979-08-22 1979-08-22 Analogue gate circuit Pending JPS5631227A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10696679A JPS5631227A (en) 1979-08-22 1979-08-22 Analogue gate circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10696679A JPS5631227A (en) 1979-08-22 1979-08-22 Analogue gate circuit

Publications (1)

Publication Number Publication Date
JPS5631227A true JPS5631227A (en) 1981-03-30

Family

ID=14447050

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10696679A Pending JPS5631227A (en) 1979-08-22 1979-08-22 Analogue gate circuit

Country Status (1)

Country Link
JP (1) JPS5631227A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4445055A (en) * 1981-03-05 1984-04-24 Siemens Aktiengesellschaft Circuit arrangement for controlling a power field-effect switching transistor
JPS62227213A (en) * 1986-03-19 1987-10-06 シ−メンス、アクチエンゲゼルシヤフト Circuit device with power mos-fet and inductive load

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53128260A (en) * 1977-04-15 1978-11-09 Toshiba Corp Switch circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53128260A (en) * 1977-04-15 1978-11-09 Toshiba Corp Switch circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4445055A (en) * 1981-03-05 1984-04-24 Siemens Aktiengesellschaft Circuit arrangement for controlling a power field-effect switching transistor
JPS62227213A (en) * 1986-03-19 1987-10-06 シ−メンス、アクチエンゲゼルシヤフト Circuit device with power mos-fet and inductive load
JPH054849B2 (en) * 1986-03-19 1993-01-21 Siemens Ag

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