JPS56164616A - Impedance converting circuit - Google Patents

Impedance converting circuit

Info

Publication number
JPS56164616A
JPS56164616A JP6806680A JP6806680A JPS56164616A JP S56164616 A JPS56164616 A JP S56164616A JP 6806680 A JP6806680 A JP 6806680A JP 6806680 A JP6806680 A JP 6806680A JP S56164616 A JPS56164616 A JP S56164616A
Authority
JP
Japan
Prior art keywords
recovery time
transistors
gate
field effect
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6806680A
Other languages
Japanese (ja)
Inventor
Osamu Nishino
Kiyoto Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6806680A priority Critical patent/JPS56164616A/en
Publication of JPS56164616A publication Critical patent/JPS56164616A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/40—Impedance converters

Landscapes

  • Circuit For Audible Band Transducer (AREA)
  • Networks Using Active Elements (AREA)

Abstract

PURPOSE:To reduce the recovery time to an excessive input, by connecting two transistors parallelly so that both are in reversed polarity between the gate and the source of a field effect type transistor. CONSTITUTION:Two transistors 25, 26 are connected in parallel between the gate G and the source S of a field effect type transistor 14. Thus, a current between terminals 12, 13 can be taken as almost hFE times in the case of a diode, by selecting a transistor having an arbitrary current amplification factor hFE. Thus, the function recovery time when an excessive input is fed to an impedance circuit can be reduced remarkably. This is because the recovery time can be shortened through the decreased time constant of the line, when the leakage current is increased.
JP6806680A 1980-05-22 1980-05-22 Impedance converting circuit Pending JPS56164616A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6806680A JPS56164616A (en) 1980-05-22 1980-05-22 Impedance converting circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6806680A JPS56164616A (en) 1980-05-22 1980-05-22 Impedance converting circuit

Publications (1)

Publication Number Publication Date
JPS56164616A true JPS56164616A (en) 1981-12-17

Family

ID=13363024

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6806680A Pending JPS56164616A (en) 1980-05-22 1980-05-22 Impedance converting circuit

Country Status (1)

Country Link
JP (1) JPS56164616A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6128213A (en) * 1985-06-21 1986-02-07 Asou Tokie Impedance converting circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6128213A (en) * 1985-06-21 1986-02-07 Asou Tokie Impedance converting circuit

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