JPS55112012A - Field effect type transistor amplifier - Google Patents
Field effect type transistor amplifierInfo
- Publication number
- JPS55112012A JPS55112012A JP2005079A JP2005079A JPS55112012A JP S55112012 A JPS55112012 A JP S55112012A JP 2005079 A JP2005079 A JP 2005079A JP 2005079 A JP2005079 A JP 2005079A JP S55112012 A JPS55112012 A JP S55112012A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- voltage
- current
- backward
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3205—Modifications of amplifiers to reduce non-linear distortion in field-effect transistor amplifiers
Abstract
PURPOSE:To improve the linearity by making use of the backward rectification detection of the gate electrode. CONSTITUTION:Impedance circuit network 13 is inserted to the gate bias circuit of FET amplifier 1, and at the same time the voltage of bias power source 8 is set to the value near the starting of the backward rectification current of the FET. When the amplitude of the input signal is small, the gate current is minute. Thus no effect is given substantially to the operation of FET5 due to network 13. And with increase of the input signal, the gate current starts to flow to cause the voltage drop across impedance Z1. This voltage drop is caused in the direction where the gate bias voltage is made shallower, and accordingly the drain current increases to cause increment of the amplifier output as well.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005079A JPS55112012A (en) | 1979-02-22 | 1979-02-22 | Field effect type transistor amplifier |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005079A JPS55112012A (en) | 1979-02-22 | 1979-02-22 | Field effect type transistor amplifier |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55112012A true JPS55112012A (en) | 1980-08-29 |
Family
ID=12016225
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005079A Pending JPS55112012A (en) | 1979-02-22 | 1979-02-22 | Field effect type transistor amplifier |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55112012A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0596562A1 (en) * | 1992-11-04 | 1994-05-11 | Laboratoires D'electronique Philips S.A.S. | Device comprising a circuit for processing an alternating signal |
-
1979
- 1979-02-22 JP JP2005079A patent/JPS55112012A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0596562A1 (en) * | 1992-11-04 | 1994-05-11 | Laboratoires D'electronique Philips S.A.S. | Device comprising a circuit for processing an alternating signal |
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