JPS5535570A - Amplifier circuit using field effect transistor - Google Patents

Amplifier circuit using field effect transistor

Info

Publication number
JPS5535570A
JPS5535570A JP10935178A JP10935178A JPS5535570A JP S5535570 A JPS5535570 A JP S5535570A JP 10935178 A JP10935178 A JP 10935178A JP 10935178 A JP10935178 A JP 10935178A JP S5535570 A JPS5535570 A JP S5535570A
Authority
JP
Japan
Prior art keywords
gate
input signal
field effect
effect transistor
amplifier circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10935178A
Other languages
Japanese (ja)
Other versions
JPS6130768B2 (en
Inventor
Yoshitami Aono
Yasuyuki Tokumitsu
Takeshi Takano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10935178A priority Critical patent/JPS5535570A/en
Publication of JPS5535570A publication Critical patent/JPS5535570A/en
Publication of JPS6130768B2 publication Critical patent/JPS6130768B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/601—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators using FET's, e.g. GaAs FET's

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To simplify the constitution of the gate bias circuit as well as realize formation of the integrated circuit and improvement of the frequency characteristics by connecting in the DC way the output signal emerging at the 2nd gate of MES. FET to the control electrode of the next-step amplifier element based on the input signal. CONSTITUTION:The input signal is applied between the source electrode and 1st gate electrode 1Ga of MOS.FET1 containing the double gate electrode. Based on this input signal, the output signal emerging at 2nd gate 1Gb of FET1 is connected in the DC way to the control electrode of MES.FET2 of the next step. As a result, the simplification and formation into an integrated circuit can be realized for the bias circuit, at the same time improving the frequency characteristics.
JP10935178A 1978-09-06 1978-09-06 Amplifier circuit using field effect transistor Granted JPS5535570A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10935178A JPS5535570A (en) 1978-09-06 1978-09-06 Amplifier circuit using field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10935178A JPS5535570A (en) 1978-09-06 1978-09-06 Amplifier circuit using field effect transistor

Publications (2)

Publication Number Publication Date
JPS5535570A true JPS5535570A (en) 1980-03-12
JPS6130768B2 JPS6130768B2 (en) 1986-07-16

Family

ID=14508017

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10935178A Granted JPS5535570A (en) 1978-09-06 1978-09-06 Amplifier circuit using field effect transistor

Country Status (1)

Country Link
JP (1) JPS5535570A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS647963U (en) * 1987-07-03 1989-01-17

Also Published As

Publication number Publication date
JPS6130768B2 (en) 1986-07-16

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