FR2379945A1 - Matching circuit for logic systems - has three MOSFETs in drain-source series between supply poles - Google Patents

Matching circuit for logic systems - has three MOSFETs in drain-source series between supply poles

Info

Publication number
FR2379945A1
FR2379945A1 FR7703140A FR7703140A FR2379945A1 FR 2379945 A1 FR2379945 A1 FR 2379945A1 FR 7703140 A FR7703140 A FR 7703140A FR 7703140 A FR7703140 A FR 7703140A FR 2379945 A1 FR2379945 A1 FR 2379945A1
Authority
FR
France
Prior art keywords
mosfets
drain
matching circuit
logic systems
source series
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7703140A
Other languages
French (fr)
Other versions
FR2379945B1 (en
Inventor
Joel Serge Colardelle
Pierre Girard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Laboratoire Central de Telecommunications SA
Original Assignee
Laboratoire Central de Telecommunications SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Laboratoire Central de Telecommunications SA filed Critical Laboratoire Central de Telecommunications SA
Priority to FR7703140A priority Critical patent/FR2379945A1/en
Priority to DE19782803811 priority patent/DE2803811A1/en
Publication of FR2379945A1 publication Critical patent/FR2379945A1/en
Application granted granted Critical
Publication of FR2379945B1 publication Critical patent/FR2379945B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H03K19/018521—Interface arrangements of complementary type, e.g. CMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)

Abstract

The matching circuit is intended for logic systems. It consists of three MOSFETs in drain/source series between the supply poles. The two MOSFETs (T2, T3) coupled to the output (S) are of n-channel type, whilst the third one (T1) is of P-channel type. If zero is present at the input (E), i.e. the gates of the first and second MOSFETs, the second MOSFET (T2) is off and the first (T1) on. The third MOSFET (T3) only turns on, if the voltage across gate and source is greater than its turn-on voltage.
FR7703140A 1977-02-04 1977-02-04 Matching circuit for logic systems - has three MOSFETs in drain-source series between supply poles Granted FR2379945A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR7703140A FR2379945A1 (en) 1977-02-04 1977-02-04 Matching circuit for logic systems - has three MOSFETs in drain-source series between supply poles
DE19782803811 DE2803811A1 (en) 1977-02-04 1978-01-28 CIRCUIT FOR ADAPTING LOGIC SYSTEMS

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7703140A FR2379945A1 (en) 1977-02-04 1977-02-04 Matching circuit for logic systems - has three MOSFETs in drain-source series between supply poles

Publications (2)

Publication Number Publication Date
FR2379945A1 true FR2379945A1 (en) 1978-09-01
FR2379945B1 FR2379945B1 (en) 1981-02-06

Family

ID=9186297

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7703140A Granted FR2379945A1 (en) 1977-02-04 1977-02-04 Matching circuit for logic systems - has three MOSFETs in drain-source series between supply poles

Country Status (2)

Country Link
DE (1) DE2803811A1 (en)
FR (1) FR2379945A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0154337A2 (en) * 1984-03-06 1985-09-11 Kabushiki Kaisha Toshiba Transistor circuit for semiconductor device with hysteresis operation and manufacturing method therefor

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5516539A (en) * 1978-07-20 1980-02-05 Nec Corp Level shifter circuit
JPS5567235A (en) * 1978-11-14 1980-05-21 Nec Corp Output circuit
FR2542526A1 (en) * 1983-03-09 1984-09-14 American Telephone & Telegraph QUARTZ OSCILLATOR
US4704547A (en) * 1984-12-10 1987-11-03 American Telephone And Telegraph Company, At&T Bell Laboratories IGFET gating circuit having reduced electric field degradation

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3818245A (en) * 1973-01-05 1974-06-18 Tokyo Shibaura Electric Co Driving circuit for an indicating device using insulated-gate field effect transistors

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3818245A (en) * 1973-01-05 1974-06-18 Tokyo Shibaura Electric Co Driving circuit for an indicating device using insulated-gate field effect transistors

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/70 *
EXBK/76 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0154337A2 (en) * 1984-03-06 1985-09-11 Kabushiki Kaisha Toshiba Transistor circuit for semiconductor device with hysteresis operation and manufacturing method therefor
EP0154337A3 (en) * 1984-03-06 1987-11-11 Kabushiki Kaisha Toshiba Transistor circuit for semiconductor device with hysteresis operation and manufacturing method therefor

Also Published As

Publication number Publication date
FR2379945B1 (en) 1981-02-06
DE2803811A1 (en) 1978-08-17

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Legal Events

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