JPS57113270A - Integrated circuit - Google Patents

Integrated circuit

Info

Publication number
JPS57113270A
JPS57113270A JP55188147A JP18814780A JPS57113270A JP S57113270 A JPS57113270 A JP S57113270A JP 55188147 A JP55188147 A JP 55188147A JP 18814780 A JP18814780 A JP 18814780A JP S57113270 A JPS57113270 A JP S57113270A
Authority
JP
Japan
Prior art keywords
threshold voltage
channel mosfet
pmos
nmos
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55188147A
Other languages
Japanese (ja)
Inventor
Nobuyuki Miyazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP55188147A priority Critical patent/JPS57113270A/en
Publication of JPS57113270A publication Critical patent/JPS57113270A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors

Abstract

PURPOSE:To prevent the turning of both a P channel MOSFET and an N channel MOSFET to ON conditions and the flowing of short-circuit currents in the transition region of output voltage by bringing the sum of the threshold voltage of both FETs to line voltage or higher. CONSTITUTION:The sum of the threshold voltage 301 of the P channel MOSFET (PMOS)104 and the threshold voltage 302 of the N channel MOSFET(NMOS) is made larger than the line voltage 207 through the methods of utilization of a back gate effect, etc. Consequently, both the PMOS and the NMOS are turned to OFF conditions in the region 307 in which the threshold voltage 301 of the PMOS and the threshold voltage 302 of the NMOS overlap one upon another. Accordingly, large short-circuit currents do not flow between a VDD(101) and a VSS(100).
JP55188147A 1980-12-29 1980-12-29 Integrated circuit Pending JPS57113270A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55188147A JPS57113270A (en) 1980-12-29 1980-12-29 Integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55188147A JPS57113270A (en) 1980-12-29 1980-12-29 Integrated circuit

Publications (1)

Publication Number Publication Date
JPS57113270A true JPS57113270A (en) 1982-07-14

Family

ID=16218564

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55188147A Pending JPS57113270A (en) 1980-12-29 1980-12-29 Integrated circuit

Country Status (1)

Country Link
JP (1) JPS57113270A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60220959A (en) * 1984-04-17 1985-11-05 Matsushita Electric Ind Co Ltd Electronic circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60220959A (en) * 1984-04-17 1985-11-05 Matsushita Electric Ind Co Ltd Electronic circuit

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