JPS5667963A - Gate protection circuit of mos type field effect transistor - Google Patents

Gate protection circuit of mos type field effect transistor

Info

Publication number
JPS5667963A
JPS5667963A JP14521979A JP14521979A JPS5667963A JP S5667963 A JPS5667963 A JP S5667963A JP 14521979 A JP14521979 A JP 14521979A JP 14521979 A JP14521979 A JP 14521979A JP S5667963 A JPS5667963 A JP S5667963A
Authority
JP
Japan
Prior art keywords
gate
surge voltage
mosfet1
protection circuit
potential side
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14521979A
Other languages
Japanese (ja)
Inventor
Toru Kuwabara
Hisayoshi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14521979A priority Critical patent/JPS5667963A/en
Publication of JPS5667963A publication Critical patent/JPS5667963A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps

Abstract

PURPOSE:To surely obstruct a dielectric breakdown of a gate against a negative pulse surge voltage by a method wherein a diffusion resistor which keeps a gate retained at a high potential side of a power source or at a low potential side is used in a gate protection circuit of an MOSFET. CONSTITUTION:A terminal 14 of a diffusion resistor providing a gate structure is connected to an input terminal and the other terminal 15 is connected to a gate of an MOSFET1, respectively. A gate 16 is retained at a low potential side of a power source. During an ordinary time, a P<-> area directly under the gate 16 is in a continuity state, as a result, an input signal is transferred to the gate of the MOSFET1 through a certain resisting component, however, when a negative surge voltage is applied, a depletion layer spreads from the P<-> area directly under the gate 16. And the space between the P<-> area and a substrate 11 is biased inversely by a negative surge voltage and a depletion layer spreads in the same way. The space between terminals 14 and 15 is interrupted by this depletion layer, thus, no surge voltage being transferred to the gate of the MOSFET1.
JP14521979A 1979-11-08 1979-11-08 Gate protection circuit of mos type field effect transistor Pending JPS5667963A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14521979A JPS5667963A (en) 1979-11-08 1979-11-08 Gate protection circuit of mos type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14521979A JPS5667963A (en) 1979-11-08 1979-11-08 Gate protection circuit of mos type field effect transistor

Publications (1)

Publication Number Publication Date
JPS5667963A true JPS5667963A (en) 1981-06-08

Family

ID=15380107

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14521979A Pending JPS5667963A (en) 1979-11-08 1979-11-08 Gate protection circuit of mos type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5667963A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5977596A (en) * 1991-09-30 1999-11-02 Texas Instruments Incorporated Depletion controlled isolation stage

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5977596A (en) * 1991-09-30 1999-11-02 Texas Instruments Incorporated Depletion controlled isolation stage

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