JPS5750463A - Complementary type mos semiconductor device - Google Patents
Complementary type mos semiconductor deviceInfo
- Publication number
- JPS5750463A JPS5750463A JP55126308A JP12630880A JPS5750463A JP S5750463 A JPS5750463 A JP S5750463A JP 55126308 A JP55126308 A JP 55126308A JP 12630880 A JP12630880 A JP 12630880A JP S5750463 A JPS5750463 A JP S5750463A
- Authority
- JP
- Japan
- Prior art keywords
- channel transistor
- drain region
- semiconductor device
- channel
- sapphire substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000000295 complement effect Effects 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052594 sapphire Inorganic materials 0.000 abstract 2
- 239000010980 sapphire Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain a semiconductor device capable of keeping the normal output voltage, by a method wherein the drain region of an N channel transistor used in a CMOS transistor inverter of SOS structure is thinned by etching previously. CONSTITUTION:A silicon film is epitaxially grown on a sapphire substrate 30, a fieled portion is selectively oxidized to obtain a field oxide film 31, and to form an N channel transistor 321, and a P channel transistor 322 on separated island-shaped silicon layers. A drain region 34 of the N channel transistor is previously etched and doped with arsenic in order to form an N<+> type drain region reaching the sapphire substrate 31. The channel portion 351 of the N channel transistor is completely separated from the source of the P channel transistor, so that the current is prevented from leaking and it functions as a normal inverter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55126308A JPS5750463A (en) | 1980-09-11 | 1980-09-11 | Complementary type mos semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55126308A JPS5750463A (en) | 1980-09-11 | 1980-09-11 | Complementary type mos semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5750463A true JPS5750463A (en) | 1982-03-24 |
Family
ID=14931967
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55126308A Pending JPS5750463A (en) | 1980-09-11 | 1980-09-11 | Complementary type mos semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5750463A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60186053A (en) * | 1984-03-06 | 1985-09-21 | Seiko Epson Corp | Thin film complementary mos circuit |
| JPH07273348A (en) * | 1994-09-27 | 1995-10-20 | Seiko Epson Corp | Complementary thin film transistor circuit |
| JPH08125028A (en) * | 1994-09-27 | 1996-05-17 | Seiko Epson Corp | Complementary thin-film transistor circuit |
-
1980
- 1980-09-11 JP JP55126308A patent/JPS5750463A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60186053A (en) * | 1984-03-06 | 1985-09-21 | Seiko Epson Corp | Thin film complementary mos circuit |
| JPH0586674B2 (en) * | 1984-03-06 | 1993-12-13 | Seiko Epson Corp | |
| JPH07273348A (en) * | 1994-09-27 | 1995-10-20 | Seiko Epson Corp | Complementary thin film transistor circuit |
| JPH08125028A (en) * | 1994-09-27 | 1996-05-17 | Seiko Epson Corp | Complementary thin-film transistor circuit |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5493981A (en) | Semiconductor device | |
| JPS6453574A (en) | Semiconductor device | |
| JPS5688354A (en) | Semiconductor integrated circuit device | |
| JPS55128884A (en) | Semiconductor photodetector | |
| JPS55151363A (en) | Mos semiconductor device and fabricating method of the same | |
| JPS5750463A (en) | Complementary type mos semiconductor device | |
| JPS5565455A (en) | Manufacture of semiconductor device | |
| JPS5727069A (en) | Mos type simiconductor device | |
| KR900001023A (en) | EPROM cell and its manufacturing method using trench isolation | |
| JPH0812917B2 (en) | Method of operating MIS transistor and MIS transistor | |
| JPS5588372A (en) | Lateral type transistor | |
| JPS54148388A (en) | Semiconductor integrated circuit device | |
| JPS55140270A (en) | Insulated gate transistor | |
| JPH0472771A (en) | Mosfet | |
| JPS5598844A (en) | Semiconductor integrated circuit | |
| JPS55127052A (en) | Field effect semiconductor device | |
| JPS55133553A (en) | Semiconductor integrated device | |
| JPS54121071A (en) | Insulator gate type field effect semiconductor device | |
| JPS5673468A (en) | Mos type semiconductor device | |
| JPS5778177A (en) | Semiconductor integrated circuit device | |
| JPS57192083A (en) | Semiconductor device | |
| JPS54112181A (en) | Nonvolatile semiconductor memory unit | |
| JPS6428926A (en) | Semiconductor device | |
| JPS5612779A (en) | Zener diode | |
| JPS5721855A (en) | Manufacture of complementary mos semiconductor device |