JPS5258487A - Production of silicon gate mis type transistor - Google Patents

Production of silicon gate mis type transistor

Info

Publication number
JPS5258487A
JPS5258487A JP13409775A JP13409775A JPS5258487A JP S5258487 A JPS5258487 A JP S5258487A JP 13409775 A JP13409775 A JP 13409775A JP 13409775 A JP13409775 A JP 13409775A JP S5258487 A JPS5258487 A JP S5258487A
Authority
JP
Japan
Prior art keywords
type transistor
mis type
production
silicon gate
gate mis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13409775A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
Yukio Tanigaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13409775A priority Critical patent/JPS5258487A/en
Publication of JPS5258487A publication Critical patent/JPS5258487A/en
Pending legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To obtiain an Si gate MIS type transistor of a high scale of integration by covering the outside circumferential part of polycrystal Si that becomes a gate electrode with an oxide film and preventing the contact between this electrode and other drain and source electrodes.
COPYRIGHT: (C)1977,JPO&Japio
JP13409775A 1975-11-10 1975-11-10 Production of silicon gate mis type transistor Pending JPS5258487A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13409775A JPS5258487A (en) 1975-11-10 1975-11-10 Production of silicon gate mis type transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13409775A JPS5258487A (en) 1975-11-10 1975-11-10 Production of silicon gate mis type transistor

Publications (1)

Publication Number Publication Date
JPS5258487A true JPS5258487A (en) 1977-05-13

Family

ID=15120358

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13409775A Pending JPS5258487A (en) 1975-11-10 1975-11-10 Production of silicon gate mis type transistor

Country Status (1)

Country Link
JP (1) JPS5258487A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5732672A (en) * 1980-08-04 1982-02-22 Mitsubishi Electric Corp Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5732672A (en) * 1980-08-04 1982-02-22 Mitsubishi Electric Corp Manufacture of semiconductor device

Similar Documents

Publication Publication Date Title
JPS52156576A (en) Production of mis semiconductor device
JPS5366181A (en) High dielectric strength mis type transistor
JPS5362985A (en) Mis type field effect transistor and its production
JPS53112069A (en) Production of mis transistor
JPS5258487A (en) Production of silicon gate mis type transistor
JPS5346288A (en) Mis type semiconductor device
JPS5315772A (en) Mis semiconductor device and its production
JPS5211776A (en) Method of manufacturing semiconductor device
JPS5220769A (en) Longitudinal semi-conductor unit
JPS52104879A (en) Manufacture of semiconductor device
JPS534480A (en) Production of semiconductor device having mis transistors
JPS53100779A (en) Production of insulated gate type semiconductor device
JPS5286086A (en) Field effect transistor
JPS5272580A (en) Production of semiconductor device
JPS5530873A (en) High withstand field-effect transistor of mis type
JPS5362987A (en) Production of mos type semiconductor device
JPS52100877A (en) Field effect transistor of junction type
JPS53139985A (en) Production of mis type transistors
JPS5296871A (en) Manufacture of mos type transistor
JPS5371573A (en) Field effect transistor of isolating gate type
JPS5376770A (en) Production of insulated gate field effect transistor
JPS52146186A (en) Semiconductor device
JPS5282078A (en) Production of mos transistor
JPS52144980A (en) Sos semiconductor device
JPS5317284A (en) Production of semiconductor device