JPS5362987A - Production of mos type semiconductor device - Google Patents

Production of mos type semiconductor device

Info

Publication number
JPS5362987A
JPS5362987A JP13895076A JP13895076A JPS5362987A JP S5362987 A JPS5362987 A JP S5362987A JP 13895076 A JP13895076 A JP 13895076A JP 13895076 A JP13895076 A JP 13895076A JP S5362987 A JPS5362987 A JP S5362987A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
type semiconductor
mos type
mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13895076A
Other languages
Japanese (ja)
Inventor
Michihiro Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP13895076A priority Critical patent/JPS5362987A/en
Publication of JPS5362987A publication Critical patent/JPS5362987A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a MOS transistor of good characteristics by using tantalum pentaoxide for a gate oxide film.
COPYRIGHT: (C)1978,JPO&Japio
JP13895076A 1976-11-17 1976-11-17 Production of mos type semiconductor device Pending JPS5362987A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13895076A JPS5362987A (en) 1976-11-17 1976-11-17 Production of mos type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13895076A JPS5362987A (en) 1976-11-17 1976-11-17 Production of mos type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5362987A true JPS5362987A (en) 1978-06-05

Family

ID=15233935

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13895076A Pending JPS5362987A (en) 1976-11-17 1976-11-17 Production of mos type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5362987A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5134451A (en) * 1989-04-17 1992-07-28 Oki Electric Industry Co., Ltd. MOS semiconductive device
WO1999031721A1 (en) * 1997-12-18 1999-06-24 Advanced Micro Devices, Inc. High k gate electrode
US6559518B1 (en) 1998-10-01 2003-05-06 Matsushita Electric Industrial Co., Ltd. MOS heterostructure, semiconductor device with the structure, and method for fabricating the semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5134451A (en) * 1989-04-17 1992-07-28 Oki Electric Industry Co., Ltd. MOS semiconductive device
WO1999031721A1 (en) * 1997-12-18 1999-06-24 Advanced Micro Devices, Inc. High k gate electrode
US6258675B1 (en) 1997-12-18 2001-07-10 Advanced Micro Devices, Inc. High K gate electrode
US6559518B1 (en) 1998-10-01 2003-05-06 Matsushita Electric Industrial Co., Ltd. MOS heterostructure, semiconductor device with the structure, and method for fabricating the semiconductor device

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