JPS6011536U - Field effect transistor drive device - Google Patents

Field effect transistor drive device

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Publication number
JPS6011536U
JPS6011536U JP10142683U JP10142683U JPS6011536U JP S6011536 U JPS6011536 U JP S6011536U JP 10142683 U JP10142683 U JP 10142683U JP 10142683 U JP10142683 U JP 10142683U JP S6011536 U JPS6011536 U JP S6011536U
Authority
JP
Japan
Prior art keywords
effect transistor
field effect
drive device
transistor drive
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10142683U
Other languages
Japanese (ja)
Inventor
好秀 金原
司 福島
Original Assignee
三菱電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三菱電機株式会社 filed Critical 三菱電機株式会社
Priority to JP10142683U priority Critical patent/JPS6011536U/en
Publication of JPS6011536U publication Critical patent/JPS6011536U/en
Pending legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の電界効果トランジスタの駆動装置を示す
回路構成図、第2図はこの考案の一実施例である電界効
果トランジスタの駆動装置を示す回路構成図、第3図、
第2図のポジスタの構造の一例を示す断面図、第4図は
第2図のポジスタの温度に対する抵抗変化率を示す特性
図、第5図は、第2図のポジスタの電流と時間との関係
を示す特性図、第6図はこの考案の他の実施例である電
界効果トランジスタの駆動装置を示す回路構成図、第7
図は、第2図の電界効果トランジスタの駆動装置を適用
してインバータ装置を形成した場合の回路構成図である
。 図において、1,1A〜1D・・・・・・駆動装置、2
・・・・・・ゲート抵抗、3,3A〜3D・・・・・・
電界効果トランジスタ(FET)、4・・・・・・負荷
、5・・・・・・電i、6゜6A〜6D・・・・・・ポ
ジスタ、7・・・・・・チタン酸バリウム系半導体、8
・・・・・・電極、9・・・・・・リード線、1゜・・
・・・・外装、16−−−−−−ドレイン、17・・・
・・・ソース、18・・・・・・ゲート、19・・・・
・・抵抗、20.21・・・・・・発光ダイオードであ
る。なお、図中、同一符号は同一、又は相当部分を示す
FIG. 1 is a circuit configuration diagram showing a conventional field effect transistor driving device, FIG. 2 is a circuit configuration diagram showing a field effect transistor driving device which is an embodiment of this invention, and FIG.
2 is a cross-sectional view showing an example of the structure of the POSISTOR, FIG. 4 is a characteristic diagram showing the rate of change in resistance with respect to temperature of the POSISTOR shown in FIG. 2, and FIG. FIG. 6 is a characteristic diagram showing the relationship; FIG. 6 is a circuit configuration diagram showing a field-effect transistor driving device according to another embodiment of the invention; FIG.
This figure is a circuit configuration diagram when an inverter device is formed by applying the field effect transistor drive device of FIG. 2. In the figure, 1, 1A to 1D...driver, 2
・・・・・・Gate resistance, 3,3A~3D・・・・・・
Field effect transistor (FET), 4...Load, 5...Electrical i, 6゜6A~6D...POSISTOR, 7...Barium titanate system semiconductor, 8
...Electrode, 9...Lead wire, 1°...
...Exterior, 16-----Drain, 17...
...Source, 18...Gate, 19...
...Resistance, 20.21... Light emitting diode. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 電界効果トランジスタのゲートに抵抗を接続し、前記ゲ
ートとソース間に信号電圧を加える、ことにより、前記
電界効果トランジスタをON・OFFさせる駆動装置に
おいて、前記ゲートに正特性感熱抵抗体を接続して成る
構成とした電界効果トランジスタの駆動装置。
In the drive device for turning on and off the field effect transistor by connecting a resistor to the gate of the field effect transistor and applying a signal voltage between the gate and the source, a positive temperature sensitive resistor is connected to the gate. A driving device for a field effect transistor configured as follows.
JP10142683U 1983-06-30 1983-06-30 Field effect transistor drive device Pending JPS6011536U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10142683U JPS6011536U (en) 1983-06-30 1983-06-30 Field effect transistor drive device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10142683U JPS6011536U (en) 1983-06-30 1983-06-30 Field effect transistor drive device

Publications (1)

Publication Number Publication Date
JPS6011536U true JPS6011536U (en) 1985-01-26

Family

ID=30239510

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10142683U Pending JPS6011536U (en) 1983-06-30 1983-06-30 Field effect transistor drive device

Country Status (1)

Country Link
JP (1) JPS6011536U (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51111042A (en) * 1975-03-26 1976-10-01 Hitachi Ltd Gate circuit
JPS5275187A (en) * 1975-12-18 1977-06-23 Mitsubishi Electric Corp Mos type semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51111042A (en) * 1975-03-26 1976-10-01 Hitachi Ltd Gate circuit
JPS5275187A (en) * 1975-12-18 1977-06-23 Mitsubishi Electric Corp Mos type semiconductor device

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