JPS5618463A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5618463A
JPS5618463A JP9354279A JP9354279A JPS5618463A JP S5618463 A JPS5618463 A JP S5618463A JP 9354279 A JP9354279 A JP 9354279A JP 9354279 A JP9354279 A JP 9354279A JP S5618463 A JPS5618463 A JP S5618463A
Authority
JP
Japan
Prior art keywords
layer
silicon substrate
back surface
nickel
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9354279A
Other languages
Japanese (ja)
Inventor
Koichi Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9354279A priority Critical patent/JPS5618463A/en
Publication of JPS5618463A publication Critical patent/JPS5618463A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10158—Shape being other than a cuboid at the passive surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To form a back surface electrode having a low contact resistance without deteriorating the insulating property of a substrate surface and characteristics of an element by employing a nickel silicide as a contact layer with a silicon substrate. CONSTITUTION:After coating a nickel layer 7 on the back surface of a silicon substrate 1, it is heated in inert gas, and a nickel silicide layer 8 is formed. Then, a titanium layer 9, a nickel layer 10, a silver layer 11 are sequentially coated on the layer 8 to form a multilayer architecture back surface electrode 12. A base layer, an emitter layer and the like are formed on the main surface of the silicon substrate 1.
JP9354279A 1979-07-23 1979-07-23 Manufacture of semiconductor device Pending JPS5618463A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9354279A JPS5618463A (en) 1979-07-23 1979-07-23 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9354279A JPS5618463A (en) 1979-07-23 1979-07-23 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5618463A true JPS5618463A (en) 1981-02-21

Family

ID=14085151

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9354279A Pending JPS5618463A (en) 1979-07-23 1979-07-23 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5618463A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59147431A (en) * 1983-02-10 1984-08-23 Origin Electric Co Ltd Formation of electrode
US4528582A (en) * 1983-09-21 1985-07-09 General Electric Company Interconnection structure for polycrystalline silicon resistor and methods of making same
JPS6222446A (en) * 1985-07-22 1987-01-30 Rohm Co Ltd Forming method of ohmic electrode
US4878099A (en) * 1982-12-08 1989-10-31 International Rectifier Corporation Metallizing system for semiconductor wafers
US4965173A (en) * 1982-12-08 1990-10-23 International Rectifier Corporation Metallizing process and structure for semiconductor devices
CN103996703A (en) * 2013-02-18 2014-08-20 三菱电机株式会社 Semiconductor device
CN106024761A (en) * 2016-05-26 2016-10-12 中山港科半导体科技有限公司 Back metal structure of power semiconductor chip and preparation method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50143466A (en) * 1974-05-08 1975-11-18
JPS5136657B2 (en) * 1974-09-09 1976-10-09

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50143466A (en) * 1974-05-08 1975-11-18
JPS5136657B2 (en) * 1974-09-09 1976-10-09

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4878099A (en) * 1982-12-08 1989-10-31 International Rectifier Corporation Metallizing system for semiconductor wafers
US4965173A (en) * 1982-12-08 1990-10-23 International Rectifier Corporation Metallizing process and structure for semiconductor devices
JPS59147431A (en) * 1983-02-10 1984-08-23 Origin Electric Co Ltd Formation of electrode
US4528582A (en) * 1983-09-21 1985-07-09 General Electric Company Interconnection structure for polycrystalline silicon resistor and methods of making same
JPS6222446A (en) * 1985-07-22 1987-01-30 Rohm Co Ltd Forming method of ohmic electrode
CN103996703A (en) * 2013-02-18 2014-08-20 三菱电机株式会社 Semiconductor device
CN106024761A (en) * 2016-05-26 2016-10-12 中山港科半导体科技有限公司 Back metal structure of power semiconductor chip and preparation method thereof

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