JPS55151358A - Fabricating method of thin film integrated circuit - Google Patents
Fabricating method of thin film integrated circuitInfo
- Publication number
- JPS55151358A JPS55151358A JP5957079A JP5957079A JPS55151358A JP S55151358 A JPS55151358 A JP S55151358A JP 5957079 A JP5957079 A JP 5957079A JP 5957079 A JP5957079 A JP 5957079A JP S55151358 A JPS55151358 A JP S55151358A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- thin film
- solder
- conductive layer
- preferable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/702—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof of thick-or thin-film circuits or parts thereof
- H01L21/707—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof of thick-or thin-film circuits or parts thereof of thin-film circuits or parts thereof
Abstract
PURPOSE:To eliminate the deterioration of adherence of an electrode with a resistance thin film on a substrate by employing an electrode consisting of a conductive layer having preferable adherence with the thin film and a conductive layer having preferable solderability. CONSTITUTION:A desired circuit element 2 is formed on an insulating substrate 1. Then, a conductive layer 3 having preferable adherence with the circuit 2 and a conductive layer 4 having preferable solderability are formed by a vacuum evaporating process or the like. Further, a conductive layer 5 made of Au or the like is so formed as to enclose the layers 3 and 4. Thereafter, a solder layer is formed on the layer 5 by a solder dip. In this case, the layer 5 making contact with the solder layer is partly vanished into the solder layer. However, the layer 4 coated with the layer 5 is protected by the layer 5 and not vanished into the solder layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5957079A JPS55151358A (en) | 1979-05-15 | 1979-05-15 | Fabricating method of thin film integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5957079A JPS55151358A (en) | 1979-05-15 | 1979-05-15 | Fabricating method of thin film integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55151358A true JPS55151358A (en) | 1980-11-25 |
Family
ID=13117023
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5957079A Pending JPS55151358A (en) | 1979-05-15 | 1979-05-15 | Fabricating method of thin film integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55151358A (en) |
-
1979
- 1979-05-15 JP JP5957079A patent/JPS55151358A/en active Pending
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