JPS575372A - Thin film diode and manufacture thereof - Google Patents

Thin film diode and manufacture thereof

Info

Publication number
JPS575372A
JPS575372A JP7785680A JP7785680A JPS575372A JP S575372 A JPS575372 A JP S575372A JP 7785680 A JP7785680 A JP 7785680A JP 7785680 A JP7785680 A JP 7785680A JP S575372 A JPS575372 A JP S575372A
Authority
JP
Japan
Prior art keywords
film
layer
thin film
manufacture
sputtering method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7785680A
Other languages
Japanese (ja)
Inventor
Masakuni Itagaki
Hideo Segawa
Koji Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP7785680A priority Critical patent/JPS575372A/en
Publication of JPS575372A publication Critical patent/JPS575372A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To readily manufacture a thin film diode and to enhance the reliability and performance of the diode by sequentially laminating a Cd layer, a Te layer and the second electrode layer on the first electrode of an insulating substrate. CONSTITUTION:The first electrode layer 2 of desired shape is formed on a substrate 1 of glass or glazed ceramic or the like. Then, a CdS film 3 is formed by vacuum deposition process or sputtering method or the like. Thereafter, a Te film 4 is formed by vacuum deposition process or sputtering method on the surface formed with the film 3, and a Te layer 4 and a conductive film 5 are further formed thereon by vacuum deposition process or sputtering method or the like. The film 5 forms the second electrode layer.
JP7785680A 1980-06-11 1980-06-11 Thin film diode and manufacture thereof Pending JPS575372A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7785680A JPS575372A (en) 1980-06-11 1980-06-11 Thin film diode and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7785680A JPS575372A (en) 1980-06-11 1980-06-11 Thin film diode and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS575372A true JPS575372A (en) 1982-01-12

Family

ID=13645699

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7785680A Pending JPS575372A (en) 1980-06-11 1980-06-11 Thin film diode and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS575372A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5749264A (en) * 1980-09-09 1982-03-23 Matsushita Electric Ind Co Ltd Photoelectric transducer
JPH0774372A (en) * 1994-03-10 1995-03-17 Citizen Watch Co Ltd Thin film diode and manufacture thereof
JPH0774373A (en) * 1994-03-10 1995-03-17 Citizen Watch Co Ltd Thin film diode and manufacture thereof
JPH0774374A (en) * 1994-03-10 1995-03-17 Citizen Watch Co Ltd Thin film diode and manufacture thereof
US6603160B1 (en) * 1998-10-30 2003-08-05 Fujitsu Display Technologies Corporation MOS capacitor, liquid crystal display, integrated circuit and method of manufacture thereof

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5749264A (en) * 1980-09-09 1982-03-23 Matsushita Electric Ind Co Ltd Photoelectric transducer
JPH0774372A (en) * 1994-03-10 1995-03-17 Citizen Watch Co Ltd Thin film diode and manufacture thereof
JPH0774373A (en) * 1994-03-10 1995-03-17 Citizen Watch Co Ltd Thin film diode and manufacture thereof
JPH0774374A (en) * 1994-03-10 1995-03-17 Citizen Watch Co Ltd Thin film diode and manufacture thereof
US6603160B1 (en) * 1998-10-30 2003-08-05 Fujitsu Display Technologies Corporation MOS capacitor, liquid crystal display, integrated circuit and method of manufacture thereof

Similar Documents

Publication Publication Date Title
EP0756334A3 (en) Light emitting device, electric device provided with the light emitting device, and method of producing the light emitting device
JPS56135968A (en) Amorphous silicon thin film transistor and manufacture thereof
CA2271412A1 (en) Photovoltaic device and its method of preparation
JPS5472696A (en) Package for super miniature size piezoelectric oscillator
JPS575372A (en) Thin film diode and manufacture thereof
SE8105918L (en) SET TO MAKE A METALLIZED DIELECTRIC CONSTRUCTION
EP0318441A3 (en) Apparatus and process for the deposition of a thin layer on a transparent substrate, in particular for the manufacture of sheets of glass
JPS57113411A (en) Thin-film head
GB1338337A (en) Cadmium sulphide thin film sustained conductivity device and method for making same
JPS6425433A (en) Manufacture of semiconductor device
JPS5752183A (en) Manufacture of thin film transistor
JPS5710224A (en) Forming method for silicone single crystalline film
JPS5784876A (en) Manufacture of thermal head
JPS6438998A (en) Thin film el display element
JPS54134396A (en) Transparent conductive film and its manufacturing process
JPS5745288A (en) Thin film photo diode
JPS5752182A (en) Thin film transistor
JPS57119434A (en) Manufacture of photoelectric conversion target
JPS56135979A (en) Photosensing element
GB1495377A (en) Method of manufacturing a charge transfer device
JPS6414891A (en) Thin film el element
JPS6466981A (en) Target for sputtering deposition and manufacture thereof
JPS56137684A (en) Photoelectric transducing element
JPS5477578A (en) High frequency high output bipolar transistor
JPS55151358A (en) Fabricating method of thin film integrated circuit