JPS5752183A - Manufacture of thin film transistor - Google Patents
Manufacture of thin film transistorInfo
- Publication number
- JPS5752183A JPS5752183A JP55128360A JP12836080A JPS5752183A JP S5752183 A JPS5752183 A JP S5752183A JP 55128360 A JP55128360 A JP 55128360A JP 12836080 A JP12836080 A JP 12836080A JP S5752183 A JPS5752183 A JP S5752183A
- Authority
- JP
- Japan
- Prior art keywords
- film
- cdte
- type
- manufacture
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000010409 thin film Substances 0.000 title abstract 2
- 239000010408 film Substances 0.000 abstract 9
- 229910004613 CdTe Inorganic materials 0.000 abstract 6
- 239000004065 semiconductor Substances 0.000 abstract 3
- 230000035945 sensitivity Effects 0.000 abstract 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000002360 preparation method Methods 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 238000001771 vacuum deposition Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers or surface barriers, e.g. bipolar phototransistor
- H01L31/1105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers or surface barriers, e.g. bipolar phototransistor the device being a bipolar phototransistor
Abstract
PURPOSE:To form a thin film bipolar transistor having high stability, high reliability and high sensitivity by enabling the manufacture thereof of arbitrary shape with ready preparation by using CdTe film. CONSTITUTION:A transparent conductive film 2, e.g., In2O3 or the like is formed on a phototransmissive substrate 1, an N type CdS film or a semiconductor film 3 containing CdS is laminated as an emitter region, and a P type CdTe film or a semiconductor layer 4 containing CdTe is laminated as a base region. Then, a P type Cd film is deposited by sputtering method or vacuum deposition method on a P type CdTe film 4, is heat treated, and a semiconductor film 5 containing an N type CdTe film or CdTe as a collector region is formed. Thereafter, an electrode 6 made of gold or the like is deposited thereon. In this manner, a phototransistor having high sensitivity can be formed by the emission of light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55128360A JPS5752183A (en) | 1980-09-16 | 1980-09-16 | Manufacture of thin film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55128360A JPS5752183A (en) | 1980-09-16 | 1980-09-16 | Manufacture of thin film transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5752183A true JPS5752183A (en) | 1982-03-27 |
Family
ID=14982888
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55128360A Pending JPS5752183A (en) | 1980-09-16 | 1980-09-16 | Manufacture of thin film transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5752183A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60141447A (en) * | 1983-12-27 | 1985-07-26 | Osaka Kiko Co Ltd | Automatic tool exchanger for machine tool |
| JPS60258978A (en) * | 1984-06-05 | 1985-12-20 | Matsushita Electric Ind Co Ltd | Transistor |
| JPS60262472A (en) * | 1984-06-11 | 1985-12-25 | Matsushita Electric Ind Co Ltd | Manufacture of transistor |
| JPH04109832U (en) * | 1991-02-28 | 1992-09-24 | 株式会社日平トヤマメカトロニクス | tool changer |
-
1980
- 1980-09-16 JP JP55128360A patent/JPS5752183A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60141447A (en) * | 1983-12-27 | 1985-07-26 | Osaka Kiko Co Ltd | Automatic tool exchanger for machine tool |
| JPS6357178B2 (en) * | 1983-12-27 | 1988-11-10 | Osaka Kiko Co Ltd | |
| JPS60258978A (en) * | 1984-06-05 | 1985-12-20 | Matsushita Electric Ind Co Ltd | Transistor |
| JPS60262472A (en) * | 1984-06-11 | 1985-12-25 | Matsushita Electric Ind Co Ltd | Manufacture of transistor |
| JPH04109832U (en) * | 1991-02-28 | 1992-09-24 | 株式会社日平トヤマメカトロニクス | tool changer |
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