JPS54148476A - Semiconductor device and its manufacture - Google Patents

Semiconductor device and its manufacture

Info

Publication number
JPS54148476A
JPS54148476A JP5780478A JP5780478A JPS54148476A JP S54148476 A JPS54148476 A JP S54148476A JP 5780478 A JP5780478 A JP 5780478A JP 5780478 A JP5780478 A JP 5780478A JP S54148476 A JPS54148476 A JP S54148476A
Authority
JP
Japan
Prior art keywords
layer
type
region
diffusion
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5780478A
Other languages
Japanese (ja)
Other versions
JPS6136373B2 (en
Inventor
Kazutoshi Kamibayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5780478A priority Critical patent/JPS54148476A/en
Publication of JPS54148476A publication Critical patent/JPS54148476A/en
Publication of JPS6136373B2 publication Critical patent/JPS6136373B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE: To increase the adhesive force when the back surface of the semiconductor substrate containing each element region formed is adhered to a container or the lead frame by removing the layer containing the P- and N-type impurities occurring on the back surface and then providing newly the high-density layer of thd same conducting type as the substrate.
CONSTITUTION: N-type buried region 2 is formed by diffusion on P-type semiconductor substrate 1, and then N-type layer 3 is epitaxial-grown on the entire surface including region 2. Then P- type region 4 reaching up to substrate 1 is formed by diffusion at layer 3 to isolate layer 3 into an island form. After this, P-type base region 5 is formed by diffusion within isolated layer 3, N-type emitter region 6 is provided within region 5, N-type collector contact region 7 is formed by diffusion at the place distant away from region 5, and the entire surface is covered with SiO2 film 8. Then the aperture is drilled to film 8 with attachment of electrode 9 at each region. At the same time, layer 10 is polished away from the back surface of substrate 1, and layer 10 contains both N- and P-type impurities which are caused during the above processes. As layer 10 which has the inferior adhesion to the container is removed away and P-type layer 11 of a high impurity density is added, the adhesive performance can be enhanced extremely.
COPYRIGHT: (C)1979,JPO&Japio
JP5780478A 1978-05-15 1978-05-15 Semiconductor device and its manufacture Granted JPS54148476A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5780478A JPS54148476A (en) 1978-05-15 1978-05-15 Semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5780478A JPS54148476A (en) 1978-05-15 1978-05-15 Semiconductor device and its manufacture

Publications (2)

Publication Number Publication Date
JPS54148476A true JPS54148476A (en) 1979-11-20
JPS6136373B2 JPS6136373B2 (en) 1986-08-18

Family

ID=13066094

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5780478A Granted JPS54148476A (en) 1978-05-15 1978-05-15 Semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPS54148476A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6054653A (en) * 1998-01-28 2000-04-25 Hansen; Gregory Robert Apparatus for attaching a surface mount component

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5179563A (en) * 1975-01-06 1976-07-10 Hitachi Ltd HANDOTAISOCHINOSEIZOHOHO

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5179563A (en) * 1975-01-06 1976-07-10 Hitachi Ltd HANDOTAISOCHINOSEIZOHOHO

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6054653A (en) * 1998-01-28 2000-04-25 Hansen; Gregory Robert Apparatus for attaching a surface mount component

Also Published As

Publication number Publication date
JPS6136373B2 (en) 1986-08-18

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