JPS5753988A - Manufacture of thin film transistor - Google Patents
Manufacture of thin film transistorInfo
- Publication number
- JPS5753988A JPS5753988A JP55128959A JP12895980A JPS5753988A JP S5753988 A JPS5753988 A JP S5753988A JP 55128959 A JP55128959 A JP 55128959A JP 12895980 A JP12895980 A JP 12895980A JP S5753988 A JPS5753988 A JP S5753988A
- Authority
- JP
- Japan
- Prior art keywords
- cdte
- cds
- addition
- layer
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910004613 CdTe Inorganic materials 0.000 abstract 5
- 239000004065 semiconductor Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052714 tellurium Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
- H01L31/1105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors the device being a bipolar phototransistor
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To obtain a thin film device which can be formed into an arbitrary configuration easily by a method wherein an emitter layer of a CdS or a semiconductor containing a CdS is treated exclusively and selectively in 300-600 deg.C, a base layer of a CdTe or a semiconductor containing a CdTe is not treated by heating, and proper metal film of Al etc. is organized as a collector. CONSTITUTION:An In2O3 2 is applied on a quartz glass 1 by evaporation and keeping the glass 1 at 250-300 deg.C a CdS or a semiconductor 3 containing CdS for an emitter is piled up to be 1-5mum thick. By the treatment at 300-600 deg.C that follows a dark current is decreased a photo current is increased. Treatment in O2 is effective. Next a layer for a base which is built of CdTe or the one which is changed to be N type by addition of In into CdTe or by addition of excess Cd into CdTe and a layer 4 which is changed to be P type by addition of Li etc. or by excess addition of Te are piled to be approximately 1-3mum thick 4, one among Al, In, Ga, Cd and Te is attached 5 for a collector, and Au electrode 6 is attached. By this constitution the device is built easily into an arbitrary configuration and enlargement in area and length can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55128959A JPS5753988A (en) | 1980-09-17 | 1980-09-17 | Manufacture of thin film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55128959A JPS5753988A (en) | 1980-09-17 | 1980-09-17 | Manufacture of thin film transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5753988A true JPS5753988A (en) | 1982-03-31 |
Family
ID=14997636
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55128959A Pending JPS5753988A (en) | 1980-09-17 | 1980-09-17 | Manufacture of thin film transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5753988A (en) |
-
1980
- 1980-09-17 JP JP55128959A patent/JPS5753988A/en active Pending
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