JPS5783055A - Thin film transistor - Google Patents
Thin film transistorInfo
- Publication number
- JPS5783055A JPS5783055A JP55157714A JP15771480A JPS5783055A JP S5783055 A JPS5783055 A JP S5783055A JP 55157714 A JP55157714 A JP 55157714A JP 15771480 A JP15771480 A JP 15771480A JP S5783055 A JPS5783055 A JP S5783055A
- Authority
- JP
- Japan
- Prior art keywords
- film
- transistor
- laminated
- whereon
- doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title 1
- 229910004613 CdTe Inorganic materials 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 2
- 206010034972 Photosensitivity reaction Diseases 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- 230000036211 photosensitivity Effects 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To reduce the dark current and to obtain the transistor with increased photo sensitivity by a method wherein an emitter and a collector are constituted with a CdS film, having a doped In or an excessive Cd, and a film of Te and the like, and a CdTe film is used as a base region. CONSTITUTION:A transparent conductive film 2 such as an SnO2 and the like is provided on a transparent substrate 1, made of quartz or the like, for example, whereon a photoelectric converting element of a facsimile and the like is formed. Then, on this conductive film 2, a CdS film 3 whereon 0.01-1mol% or thereabout of In is doped (or Cd in excess of the quantity of stoichiometry by 1- 10%) is laminated as an emitter region. Then, after a heat treatment has been performed at 300-600 deg.C, the CdTe film 4 is laminated under the condition wherein P type will be formed, and then a Te film 5 (or one of Cd, Ge, In and Al films) is laminated, and an electrode 6 such as Au and the like are formed at the upper section by performing an evaporation. Through these procedures, the characteristics suitable for the photo transistor can be obtained and, at the same time, the transistor having a large area or an arbitrary shape can also be manufactured easily.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55157714A JPS5783055A (en) | 1980-11-11 | 1980-11-11 | Thin film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55157714A JPS5783055A (en) | 1980-11-11 | 1980-11-11 | Thin film transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5783055A true JPS5783055A (en) | 1982-05-24 |
Family
ID=15655765
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55157714A Pending JPS5783055A (en) | 1980-11-11 | 1980-11-11 | Thin film transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5783055A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003081060A (en) * | 2001-09-11 | 2003-03-19 | Fujitsu Ten Ltd | Key lock-in preventing device |
-
1980
- 1980-11-11 JP JP55157714A patent/JPS5783055A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003081060A (en) * | 2001-09-11 | 2003-03-19 | Fujitsu Ten Ltd | Key lock-in preventing device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS55108780A (en) | Thin film solar cell | |
| JPS57159070A (en) | Manufacture of photo electromotive force element | |
| JPS5783055A (en) | Thin film transistor | |
| JPS5749263A (en) | Manufacture of close contact type image sensor | |
| JPS55111180A (en) | Thin-film solar battery of high output voltage | |
| JPS5694674A (en) | Thin-film solar cell | |
| JPS5739569A (en) | Solid state image pickup device | |
| JPS57114290A (en) | Amorphous thin film solar battery | |
| JPS57155784A (en) | Photodiode | |
| JPS5632774A (en) | Thin film type photovoltaic element and manufacture thereof | |
| JPS5752183A (en) | Manufacture of thin film transistor | |
| JPS57194570A (en) | Solid state image pick-up device and manufacture thereof | |
| JPS5752182A (en) | Thin film transistor | |
| JPS54102992A (en) | Photoelectric converting device | |
| JPS5745288A (en) | Thin film photo diode | |
| JPS5753988A (en) | Manufacture of thin film transistor | |
| JPS5779664A (en) | Thin film transistor | |
| JPS56138961A (en) | Photoelectric conversion element | |
| JPS5678178A (en) | Photoelectric transducer | |
| JPS5783068A (en) | Manufacture of phototransistor | |
| JPS5687381A (en) | Photoelectric conversion element | |
| JPS5713775A (en) | Photocell structure and manufacture thereof | |
| JPS5623772A (en) | Photodetecting face plate and its manufacture | |
| JPS5553465A (en) | Solar cell | |
| JPS6428968A (en) | Solar cell |