JPS5745288A - Thin film photo diode - Google Patents

Thin film photo diode

Info

Publication number
JPS5745288A
JPS5745288A JP55120816A JP12081680A JPS5745288A JP S5745288 A JPS5745288 A JP S5745288A JP 55120816 A JP55120816 A JP 55120816A JP 12081680 A JP12081680 A JP 12081680A JP S5745288 A JPS5745288 A JP S5745288A
Authority
JP
Japan
Prior art keywords
film
thickness
laminated
cds
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55120816A
Other languages
Japanese (ja)
Inventor
Masakuni Itagaki
Hideo Segawa
Koichi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP55120816A priority Critical patent/JPS5745288A/en
Publication of JPS5745288A publication Critical patent/JPS5745288A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To enable easire production, larger length and area of the product along with a less leakage current and quick light response by means of a Cd oxide between a CdS film and a CdTd film of a thin film photo diode. CONSTITUTION:A transparent conductive film 2 is laminated on a light transmitting substrate 1 at a thickness of 100Angstrom -1mum and a CdS film 3 is laminated thereon at a thickness of 0.5-10mum. Then, the CdS film 3 heat treated in an atmosphere containing oxygen at 300-700 deg.C to partially oxidize the surface layer thereof whereby a Cd oxide film 4 is formed. Otherwise, a coat of CdO is laminated on the CdS film 3 at a thickness of 0.1-1mum to make the Cd oxide film 4. Then, a CdTe film 5 is laminated at a thickness of 0.2-5mum on the Cd oxide film 4 and additionally, overlayerd with a Te film or Cd film 6 at a thickness of 0.1-3mum. An ohmic electrode couple 7 of gold or the like is laid on the Te film or the Cd film 6.
JP55120816A 1980-09-01 1980-09-01 Thin film photo diode Pending JPS5745288A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55120816A JPS5745288A (en) 1980-09-01 1980-09-01 Thin film photo diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55120816A JPS5745288A (en) 1980-09-01 1980-09-01 Thin film photo diode

Publications (1)

Publication Number Publication Date
JPS5745288A true JPS5745288A (en) 1982-03-15

Family

ID=14795675

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55120816A Pending JPS5745288A (en) 1980-09-01 1980-09-01 Thin film photo diode

Country Status (1)

Country Link
JP (1) JPS5745288A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8188562B2 (en) 2011-05-31 2012-05-29 Primestar Solar, Inc. Multi-layer N-type stack for cadmium telluride based thin film photovoltaic devices and methods of making
US8241930B2 (en) 2011-05-31 2012-08-14 Primestar Solar, Inc. Methods of forming a window layer in a cadmium telluride based thin film photovoltaic device
US8247686B2 (en) 2011-05-31 2012-08-21 Primestar Solar, Inc. Multi-layer N-type stack for cadmium telluride based thin film photovoltaic devices and methods of making
US9054245B2 (en) 2012-03-02 2015-06-09 First Solar, Inc. Doping an absorber layer of a photovoltaic device via diffusion from a window layer

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8188562B2 (en) 2011-05-31 2012-05-29 Primestar Solar, Inc. Multi-layer N-type stack for cadmium telluride based thin film photovoltaic devices and methods of making
US8241930B2 (en) 2011-05-31 2012-08-14 Primestar Solar, Inc. Methods of forming a window layer in a cadmium telluride based thin film photovoltaic device
US8247686B2 (en) 2011-05-31 2012-08-21 Primestar Solar, Inc. Multi-layer N-type stack for cadmium telluride based thin film photovoltaic devices and methods of making
US9054245B2 (en) 2012-03-02 2015-06-09 First Solar, Inc. Doping an absorber layer of a photovoltaic device via diffusion from a window layer

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