JPS574175A - Manufacture of photodiode - Google Patents
Manufacture of photodiodeInfo
- Publication number
- JPS574175A JPS574175A JP7719380A JP7719380A JPS574175A JP S574175 A JPS574175 A JP S574175A JP 7719380 A JP7719380 A JP 7719380A JP 7719380 A JP7719380 A JP 7719380A JP S574175 A JPS574175 A JP S574175A
- Authority
- JP
- Japan
- Prior art keywords
- film
- laminated
- cds
- treated
- sputtering method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000004544 sputter deposition Methods 0.000 abstract 3
- 229910004613 CdTe Inorganic materials 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 229910052760 oxygen Inorganic materials 0.000 abstract 2
- 239000001301 oxygen Substances 0.000 abstract 2
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 1
- 238000010030 laminating Methods 0.000 abstract 1
- 230000004298 light response Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000007921 spray Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To obtain small dark currents at the time of reverse bias and excellent light currents at the time of light irradiation while increasing light response speed by conducting heat treatment at least after a CdS film is laminated or a CdTe film is laminated. CONSTITUTION:A transparent conductive film 2 in In2O3, etc. is formed on a light transmitting substrate 1 according to a spray method, etc., and the CdS film is laminated on the film 2 according to a sputtering method, etc. When the CdS film is thermally treated, the CdS film is treated for 10-60min in an atmosphere containing oxygen at a temperature of 700 deg.C or lower, preferably, 300-600 deg.C. The CdTe film 4 is laminated on the CdS film according to the sputtering method, etc., and when the film 4 is thermally treated it is treated in the atmosphere containing oxygen at a temperature of 100-700 deg.C, preferably, 300-600 deg.C. A Te film 5 is laminated on the film 4 according to the sputtering method, etc., and heat treatment is not conducted after laminating. An ohmic electrode 6 in gold, Al, etc. is formed on the film 5 according to evaporation, etc., and the photodiode is obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7719380A JPS574175A (en) | 1980-06-10 | 1980-06-10 | Manufacture of photodiode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7719380A JPS574175A (en) | 1980-06-10 | 1980-06-10 | Manufacture of photodiode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS574175A true JPS574175A (en) | 1982-01-09 |
Family
ID=13626974
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7719380A Pending JPS574175A (en) | 1980-06-10 | 1980-06-10 | Manufacture of photodiode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS574175A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5918569U (en) * | 1982-07-27 | 1984-02-04 | 東京パ−ツ工業株式会社 | Axial gap type coreless motor |
-
1980
- 1980-06-10 JP JP7719380A patent/JPS574175A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5918569U (en) * | 1982-07-27 | 1984-02-04 | 東京パ−ツ工業株式会社 | Axial gap type coreless motor |
| JPH0226225Y2 (en) * | 1982-07-27 | 1990-07-17 |
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