JPS57143874A - Manufacture of solar cell - Google Patents

Manufacture of solar cell

Info

Publication number
JPS57143874A
JPS57143874A JP56028530A JP2853081A JPS57143874A JP S57143874 A JPS57143874 A JP S57143874A JP 56028530 A JP56028530 A JP 56028530A JP 2853081 A JP2853081 A JP 2853081A JP S57143874 A JPS57143874 A JP S57143874A
Authority
JP
Japan
Prior art keywords
solar cell
electrode film
type
titanium
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56028530A
Other languages
Japanese (ja)
Inventor
Hajime Ichiyanagi
Nobuhiko Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP56028530A priority Critical patent/JPS57143874A/en
Publication of JPS57143874A publication Critical patent/JPS57143874A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Abstract

PURPOSE:To manufacture the light weight solar cell at low cost, and to form the flexible solar cell, secular degradation thereof is little, by shaping an electrode film through an ion plating method. CONSTITUTION:The electrode film 12 in titanium, etc. is deposited onto a substrate 11 made of a high molecular material (such as polyimide) through the ion plating method. An amorphous silicon (a-Si) layer 13 is formed onto the electrode film 12. The a-Si semiconductor layer 13 is composed of the three layers of an N type - an I type - a P type from the titanium electrode 12 side. A transparent electrode film 14 transmitting sunrays 15 such as tin oxide indium is shaped through a vacuum evaporation method. Accordingly, the titanium electrode 12 is not exfoliated from the polyimide substrate 11, and the degradation of the characteristics of the solar cell is decreased.
JP56028530A 1981-02-27 1981-02-27 Manufacture of solar cell Pending JPS57143874A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56028530A JPS57143874A (en) 1981-02-27 1981-02-27 Manufacture of solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56028530A JPS57143874A (en) 1981-02-27 1981-02-27 Manufacture of solar cell

Publications (1)

Publication Number Publication Date
JPS57143874A true JPS57143874A (en) 1982-09-06

Family

ID=12251214

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56028530A Pending JPS57143874A (en) 1981-02-27 1981-02-27 Manufacture of solar cell

Country Status (1)

Country Link
JP (1) JPS57143874A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0103168A2 (en) * 1982-09-10 1984-03-21 Hitachi, Ltd. Amorphous silicon solar battery
US4543441A (en) * 1983-02-14 1985-09-24 Hitachi, Ltd. Solar battery using amorphous silicon
WO2012066136A1 (en) 2010-11-18 2012-05-24 Dsm Ip Assets B.V. Flexible electrical generators

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0103168A2 (en) * 1982-09-10 1984-03-21 Hitachi, Ltd. Amorphous silicon solar battery
EP0103168A3 (en) * 1982-09-10 1986-07-02 Hitachi, Ltd. Amorphous silicon solar battery
US4543441A (en) * 1983-02-14 1985-09-24 Hitachi, Ltd. Solar battery using amorphous silicon
WO2012066136A1 (en) 2010-11-18 2012-05-24 Dsm Ip Assets B.V. Flexible electrical generators

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