JPS574174A - Manufacture of photodiode - Google Patents
Manufacture of photodiodeInfo
- Publication number
- JPS574174A JPS574174A JP7719280A JP7719280A JPS574174A JP S574174 A JPS574174 A JP S574174A JP 7719280 A JP7719280 A JP 7719280A JP 7719280 A JP7719280 A JP 7719280A JP S574174 A JPS574174 A JP S574174A
- Authority
- JP
- Japan
- Prior art keywords
- film
- heat treatment
- laminated
- conducted
- cdte
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000010438 heat treatment Methods 0.000 abstract 5
- 229910004613 CdTe Inorganic materials 0.000 abstract 4
- 238000010030 laminating Methods 0.000 abstract 3
- 238000004544 sputter deposition Methods 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 abstract 1
- 230000006866 deterioration Effects 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000007921 spray Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To obtain the photodiode having excellent performance by conducting no heat treatment at respective period after a CdS film, a CdTe film and a Te film are laminated. CONSTITUTION:A transparent conductive film 2 in In2O3, etc. is formed on a light transmitting substrate 1 in soda glass, etc. according to a spray method, the CdS film 3 is laminated on the film 2 according to a sputtering method, etc. and heat treatment is not conducted after laminating. The CdTe film 4 is laminated on the film 3 according to the sputtering method, etc., and heat treatment is not conducted after laminating. The Te film is laminated on the CdTe film according to the sputtering method, keeping the temperature of the substrate at 500 deg.C or lower, and heat treatment is not conducted after laminating. An ohmic electrode 6 in gold, Al, etc. is formed on the film 5 according to evaporation, etc. Accordingly, this method has no thermal harmful influence on the Te film because heat treatment is not conducted to the CdS film, the CdTe film and the Te film. Thus, the increase of dark currents or the deterioration of a switching characteristic can be prevented.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7719280A JPS574174A (en) | 1980-06-10 | 1980-06-10 | Manufacture of photodiode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7719280A JPS574174A (en) | 1980-06-10 | 1980-06-10 | Manufacture of photodiode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS574174A true JPS574174A (en) | 1982-01-09 |
Family
ID=13626946
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7719280A Pending JPS574174A (en) | 1980-06-10 | 1980-06-10 | Manufacture of photodiode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS574174A (en) |
-
1980
- 1980-06-10 JP JP7719280A patent/JPS574174A/en active Pending
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