JPS5766664A - Photosensor - Google Patents
PhotosensorInfo
- Publication number
- JPS5766664A JPS5766664A JP55142476A JP14247680A JPS5766664A JP S5766664 A JPS5766664 A JP S5766664A JP 55142476 A JP55142476 A JP 55142476A JP 14247680 A JP14247680 A JP 14247680A JP S5766664 A JPS5766664 A JP S5766664A
- Authority
- JP
- Japan
- Prior art keywords
- film
- transparent
- wear resistant
- laminated
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010408 film Substances 0.000 abstract 8
- 239000011521 glass Substances 0.000 abstract 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 2
- 229910004613 CdTe Inorganic materials 0.000 abstract 1
- 230000000903 blocking effect Effects 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 230000008030 elimination Effects 0.000 abstract 1
- 238000003379 elimination reaction Methods 0.000 abstract 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
PURPOSE:To enable the elimination of a light collector and a contact glass in a picture reading system by covering a photodetector provided with a photodetecting surface on the surface with a transparent wear resistant film. CONSTITUTION:A metallic electrode film 9 is formed in a desired pattern on a transparent insulating substrate 1 made of glass, plastic or the like. A Te film 7 and a CdTe film 6 are laminated on the film 9, a CdS film 5 and a transparent electrode film 4, e.g., SnO2, In2O3 or the like are further laminated thereon, and a transparent wear resistant film 17 is eventually covered on the entire surface. With such construction a thin film photodiode 18 and a blocking diode 3 are so connected as to be reverse polarity to one another.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55142476A JPS5766664A (en) | 1980-10-14 | 1980-10-14 | Photosensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55142476A JPS5766664A (en) | 1980-10-14 | 1980-10-14 | Photosensor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5766664A true JPS5766664A (en) | 1982-04-22 |
Family
ID=15316200
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55142476A Pending JPS5766664A (en) | 1980-10-14 | 1980-10-14 | Photosensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5766664A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0162307A2 (en) * | 1984-04-24 | 1985-11-27 | Hitachi, Ltd. | Image sensor and method of manufacturing same |
JPS6464266A (en) * | 1987-05-22 | 1989-03-10 | Oki Electric Ind Co Ltd | Completely close contact type image sensor |
KR100286464B1 (en) * | 1997-03-25 | 2001-05-02 | 포만 제프리 엘 | Thin Film Transistors Fabricated on Plastic Substrates |
-
1980
- 1980-10-14 JP JP55142476A patent/JPS5766664A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0162307A2 (en) * | 1984-04-24 | 1985-11-27 | Hitachi, Ltd. | Image sensor and method of manufacturing same |
JPS6464266A (en) * | 1987-05-22 | 1989-03-10 | Oki Electric Ind Co Ltd | Completely close contact type image sensor |
KR100286464B1 (en) * | 1997-03-25 | 2001-05-02 | 포만 제프리 엘 | Thin Film Transistors Fabricated on Plastic Substrates |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ES8500508A1 (en) | Photovoltaic device. | |
JPS56135980A (en) | Photoelectric conversion element | |
JPS57173256A (en) | Image sensor | |
JPS54116890A (en) | Photoelectric converter | |
JPS5766664A (en) | Photosensor | |
AU561774B2 (en) | Solar cell with undulated transparent conductive layer | |
JPS57104278A (en) | Photoelectric converting device | |
JPS55165066A (en) | Photoelectric conversion unit | |
JPS5627562A (en) | Tight image sensor | |
JPS5721875A (en) | Photosensor | |
JPS5726476A (en) | Linear photoelectromotive force element | |
JPS544582A (en) | Photoelectric transducer | |
JPS5645084A (en) | Manufacturing of light-electricity converter | |
JPS5745288A (en) | Thin film photo diode | |
JPS57157578A (en) | Active crystalline silicon thin film photovoltaic element | |
JPS57166083A (en) | Thin film type photoelectric conversion element | |
JPS5726475A (en) | Linear photoelectromotive force element | |
JPS6490551A (en) | Contact type image sensor | |
JPS5766662A (en) | Image sensor | |
JPS5632774A (en) | Thin film type photovoltaic element and manufacture thereof | |
JPS57183076A (en) | Field control type optical semiconductor device | |
JPS5778263A (en) | Adhesive type image sensor | |
JPS5291666A (en) | Photodiode | |
JPS56138961A (en) | Photoelectric conversion element | |
JPS5779664A (en) | Thin film transistor |