JPS5778263A - Adhesive type image sensor - Google Patents

Adhesive type image sensor

Info

Publication number
JPS5778263A
JPS5778263A JP55153830A JP15383080A JPS5778263A JP S5778263 A JPS5778263 A JP S5778263A JP 55153830 A JP55153830 A JP 55153830A JP 15383080 A JP15383080 A JP 15383080A JP S5778263 A JPS5778263 A JP S5778263A
Authority
JP
Japan
Prior art keywords
elements
image sensor
protective layer
orignal
interval
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55153830A
Other languages
Japanese (ja)
Other versions
JPS6117186B2 (en
Inventor
Tetsuo Tajiri
Yoshio Hatate
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP55153830A priority Critical patent/JPS5778263A/en
Publication of JPS5778263A publication Critical patent/JPS5778263A/en
Publication of JPS6117186B2 publication Critical patent/JPS6117186B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)

Abstract

PURPOSE:To increase the output, to enable matrix wiring and to achieve a simple adhesive image sensor, by arranging a photoelectric conversion element of each bit separately and constituting the electrodes as a lattice shape. CONSTITUTION:A light transmitting layer 7 is located on a substrate 6 except a part of a transparent window 13, and photoelectric conversion elements 8 of photoelectric effect type such as CdS, Se are separately formed thereon and opaque electrodes 9 such as AI, INSN are formed in latice. The entire elements 8 are convered with a transparent protective layer 11, and an interval between an original 2 and the elements 8 is taken so that the reflected light from the orignal 2 can be caught on the elements 8 for the protective layer 11 and the deterioration of the elements 8 due to friction with the orignal 2 can be prevented. The interval between the elements 8 and a transparent window 13 is set to <=1/10 of the mutual intervals of the elements 8, the thickness of the protective layer 11 is made thinner than the mutual intervals of the elements 8, and the output of the image sensor is increased and the matrix wiring can be made easy.
JP55153830A 1980-11-04 1980-11-04 Adhesive type image sensor Granted JPS5778263A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55153830A JPS5778263A (en) 1980-11-04 1980-11-04 Adhesive type image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55153830A JPS5778263A (en) 1980-11-04 1980-11-04 Adhesive type image sensor

Publications (2)

Publication Number Publication Date
JPS5778263A true JPS5778263A (en) 1982-05-15
JPS6117186B2 JPS6117186B2 (en) 1986-05-06

Family

ID=15571015

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55153830A Granted JPS5778263A (en) 1980-11-04 1980-11-04 Adhesive type image sensor

Country Status (1)

Country Link
JP (1) JPS5778263A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60115259A (en) * 1983-11-26 1985-06-21 Nippon Telegr & Teleph Corp <Ntt> Photoelectric conversion device and manufacture thereof
JPS6242557A (en) * 1985-08-20 1987-02-24 Matsushita Electric Ind Co Ltd Adhesion type image sensor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60115259A (en) * 1983-11-26 1985-06-21 Nippon Telegr & Teleph Corp <Ntt> Photoelectric conversion device and manufacture thereof
JPS6242557A (en) * 1985-08-20 1987-02-24 Matsushita Electric Ind Co Ltd Adhesion type image sensor

Also Published As

Publication number Publication date
JPS6117186B2 (en) 1986-05-06

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