JPS5766665A - Image sensor - Google Patents
Image sensorInfo
- Publication number
- JPS5766665A JPS5766665A JP55142477A JP14247780A JPS5766665A JP S5766665 A JPS5766665 A JP S5766665A JP 55142477 A JP55142477 A JP 55142477A JP 14247780 A JP14247780 A JP 14247780A JP S5766665 A JPS5766665 A JP S5766665A
- Authority
- JP
- Japan
- Prior art keywords
- film
- multilayer wire
- image sensor
- wire
- transparent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010408 film Substances 0.000 abstract 9
- 239000004020 conductor Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 238000001259 photo etching Methods 0.000 abstract 2
- 239000010409 thin film Substances 0.000 abstract 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 2
- 229910004613 CdTe Inorganic materials 0.000 abstract 1
- 230000000903 blocking effect Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000011159 matrix material Substances 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 abstract 1
- 238000001771 vacuum deposition Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
PURPOSE:To improve the yield of an image sensor at the manufacturing time and to obtain the image sensor of high quality by composing a matrix wire of a thin film multilayer wire. CONSTITUTION:A metallic conductor film 2 is formed in a desired pattern on a transparent substrare 1. Then, an insulating film 3 is formed by sputtering on the substrate 1, and a window 3a is formed by photoetching at the connecting part of a photodetector and a multilayer wire. Further, a multilayer wire metallic conductor film 4 is formed by a vacuum deposition method, a photo-etching method. A Te film 5, a CdTe film 6, a CdS film 7, a transparent electrode 8, e.g., SnO2, In2O5, etc., are sequentially laminated on the thin film multilayer wire and an Au light shielding film 9 is partly laminated further thereon, and a transparent protective film 10, e.g., Ta2O5 is eventually formed on the entire surface. The part designated by reference numeral 11 forms a photodiode, and the part 12 covered with the film 9 becomes a blocking diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55142477A JPS5766665A (en) | 1980-10-14 | 1980-10-14 | Image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55142477A JPS5766665A (en) | 1980-10-14 | 1980-10-14 | Image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5766665A true JPS5766665A (en) | 1982-04-22 |
Family
ID=15316225
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55142477A Pending JPS5766665A (en) | 1980-10-14 | 1980-10-14 | Image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5766665A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60218886A (en) * | 1984-04-16 | 1985-11-01 | Canon Inc | Photo-sensor |
| US5027226A (en) * | 1987-09-18 | 1991-06-25 | Ricoh Company, Ltd. | Contact type image sensor |
| US8203194B2 (en) | 2004-02-05 | 2012-06-19 | Intellectual Ventures Ii Llc | Image sensor and method of manufacturing the same |
-
1980
- 1980-10-14 JP JP55142477A patent/JPS5766665A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60218886A (en) * | 1984-04-16 | 1985-11-01 | Canon Inc | Photo-sensor |
| US5027226A (en) * | 1987-09-18 | 1991-06-25 | Ricoh Company, Ltd. | Contact type image sensor |
| US8203194B2 (en) | 2004-02-05 | 2012-06-19 | Intellectual Ventures Ii Llc | Image sensor and method of manufacturing the same |
| US8580598B2 (en) | 2004-02-05 | 2013-11-12 | Intellectual Ventures Ii Llc | Image sensor and method of manufacturing the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0402114A3 (en) | Opto-semiconductor device and method of fabrication of the same | |
| JPS5766665A (en) | Image sensor | |
| JPS56135982A (en) | Array of photoelectric conversion element | |
| JPS5726476A (en) | Linear photoelectromotive force element | |
| JPS5840856A (en) | Array for photosensor | |
| JPS5627562A (en) | Tight image sensor | |
| JPS57166083A (en) | Thin film type photoelectric conversion element | |
| JPS5766663A (en) | Image sensor | |
| JPS575372A (en) | Thin film diode and manufacture thereof | |
| JPS5752182A (en) | Thin film transistor | |
| JPS5730378A (en) | Semiconductor photodetector | |
| JPS6431457A (en) | Manufacture of thin film transistor | |
| JPS5752183A (en) | Manufacture of thin film transistor | |
| JPS56126723A (en) | Photoelectric transducing device for illuminometer | |
| JPS5713776A (en) | Photovoltaic device | |
| JPS5730381A (en) | Schottky type photodetector | |
| JPS5778263A (en) | Adhesive type image sensor | |
| JPS5788044A (en) | Manufacture of glass mask | |
| JPS6421958A (en) | Image sensor | |
| JPS57208168A (en) | Image sensor | |
| JPS5766664A (en) | Photosensor | |
| JPS6421957A (en) | Image sensor | |
| JPS61181158A (en) | Contact type image sensor | |
| JPS56137684A (en) | Photoelectric transducing element | |
| JPH0563171A (en) | Manufacture of optoelectric transducer |