JPS6421958A - Image sensor - Google Patents
Image sensorInfo
- Publication number
- JPS6421958A JPS6421958A JP62177935A JP17793587A JPS6421958A JP S6421958 A JPS6421958 A JP S6421958A JP 62177935 A JP62177935 A JP 62177935A JP 17793587 A JP17793587 A JP 17793587A JP S6421958 A JPS6421958 A JP S6421958A
- Authority
- JP
- Japan
- Prior art keywords
- film
- image sensor
- insulating substrate
- successively laminated
- sic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010408 film Substances 0.000 abstract 9
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 6
- 239000000758 substrate Substances 0.000 abstract 3
- 238000002955 isolation Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
PURPOSE:To manufacture an image sensor in high performance, simple process and excellent yield using an a-Si:H thin film by a method wherein a photodetec tor is composed of an individual electrode formed on an insulating film and a common film successively laminated. CONSTITUTION:A photodetector in an image sensor on an insulating substrate with multiple photodetectors formed thereon is composed of individual electrodes 2, a p<+>-a-Sic:H film 3, an i-a-Si:H film 4, an n<+>-a-Si:H film 5 and a common electrode 6 successively laminated on the insulating substrate 1. At this time, the layers 3-6 excluding the individual electrode 2 are not subjected to individ ual element isolation. For example, multiple metallic individual electrodes such as Cr, etc., are formed coming into line corresponding to respective elements on the insulating substrate 1 such as glass, etc., while the p<+>-a-SiC:H film 3, the i-a-Si:H film 4, the n<+>-a-Si:H film 5 are successively laminated to be formed without element isolation. Furthermore, the common electrode 6 such as ITO, etc., is formed into one body all over the n<+>-a-Si:H film 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62177935A JPS6421958A (en) | 1987-07-16 | 1987-07-16 | Image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62177935A JPS6421958A (en) | 1987-07-16 | 1987-07-16 | Image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6421958A true JPS6421958A (en) | 1989-01-25 |
Family
ID=16039638
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62177935A Pending JPS6421958A (en) | 1987-07-16 | 1987-07-16 | Image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6421958A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01278774A (en) * | 1988-04-30 | 1989-11-09 | Semiconductor Energy Lab Co Ltd | Image sensor |
| JPH02278873A (en) * | 1989-04-20 | 1990-11-15 | Toshiba Corp | Manufacture of close contact sensor |
| KR100537377B1 (en) * | 1998-12-16 | 2006-03-09 | 엘지.필립스 엘시디 주식회사 | Thin Film Transistor Optical Sensor |
| JP2014067768A (en) * | 2012-09-25 | 2014-04-17 | Fujifilm Corp | Solid-state image sensor and method of manufacturing the same |
-
1987
- 1987-07-16 JP JP62177935A patent/JPS6421958A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01278774A (en) * | 1988-04-30 | 1989-11-09 | Semiconductor Energy Lab Co Ltd | Image sensor |
| JPH02278873A (en) * | 1989-04-20 | 1990-11-15 | Toshiba Corp | Manufacture of close contact sensor |
| KR100537377B1 (en) * | 1998-12-16 | 2006-03-09 | 엘지.필립스 엘시디 주식회사 | Thin Film Transistor Optical Sensor |
| JP2014067768A (en) * | 2012-09-25 | 2014-04-17 | Fujifilm Corp | Solid-state image sensor and method of manufacturing the same |
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