JPS57157578A - Active crystalline silicon thin film photovoltaic element - Google Patents

Active crystalline silicon thin film photovoltaic element

Info

Publication number
JPS57157578A
JPS57157578A JP56042867A JP4286781A JPS57157578A JP S57157578 A JPS57157578 A JP S57157578A JP 56042867 A JP56042867 A JP 56042867A JP 4286781 A JP4286781 A JP 4286781A JP S57157578 A JPS57157578 A JP S57157578A
Authority
JP
Japan
Prior art keywords
layer
transparent conductive
oxidized
conductive layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56042867A
Other languages
Japanese (ja)
Other versions
JPS6152992B2 (en
Inventor
Yoshihiro Hamakawa
Nobuhiko Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP56042867A priority Critical patent/JPS57157578A/en
Publication of JPS57157578A publication Critical patent/JPS57157578A/en
Publication of JPS6152992B2 publication Critical patent/JPS6152992B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

PURPOSE:To obtain an element having high photoelectric conversion efficiency of a photovoltaic element formed of a transparent conductive layer and an amorphous semiconductor layer by forming the transparent conductive layer of a two- layer transparent conductive layer of oxidized indium and oxidized tin and contacting the oxidized tin side with the conductive layer. CONSTITUTION:An oxidized indium series transparent conductive film 11 and an oxidized tin series transparent conductive film 12 are laminated on a transparent substrate 10 made of glass or the like, and an amorphous semiconductor layer 13 is formed thereon. The layer 13 of this case is formed sequentially from the film 12 of a P type amorphous Si layer 14, an i type amorphous Si layer 15, and an N type amorphous semiconductor layer 16 as a PIN junction. Subsequently, an aluminum electrode 17 is covered on the layer 16, solar light rays 18 are incident from the side of the substrate 10. When a stainless steel or the like is used for the substrate, the laminating sequence is reversely performed, and the light rays ar incident to the oxidized indium side. Thus, the sheet resistance of the transparent conductive layer can be reduced, and high efficiency can be obtained even if the element has relatively large area.
JP56042867A 1981-03-23 1981-03-23 Active crystalline silicon thin film photovoltaic element Granted JPS57157578A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56042867A JPS57157578A (en) 1981-03-23 1981-03-23 Active crystalline silicon thin film photovoltaic element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56042867A JPS57157578A (en) 1981-03-23 1981-03-23 Active crystalline silicon thin film photovoltaic element

Publications (2)

Publication Number Publication Date
JPS57157578A true JPS57157578A (en) 1982-09-29
JPS6152992B2 JPS6152992B2 (en) 1986-11-15

Family

ID=12647979

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56042867A Granted JPS57157578A (en) 1981-03-23 1981-03-23 Active crystalline silicon thin film photovoltaic element

Country Status (1)

Country Link
JP (1) JPS57157578A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58151072A (en) * 1983-02-08 1983-09-08 Konishiroku Photo Ind Co Ltd Solar battery and manufacture thereof
JPS59107252A (en) * 1982-12-10 1984-06-21 Matsushita Electric Ind Co Ltd Gas detecting element
JPS59161881A (en) * 1983-03-07 1984-09-12 Semiconductor Energy Lab Co Ltd Manufacture of photoelectric conversion device
EP0137291A2 (en) * 1983-09-26 1985-04-17 Kabushiki Kaisha Komatsu Seisakusho Amorphous silicon solar cells

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020261746A1 (en) * 2019-06-25 2020-12-30 パナソニックＩｐマネジメント株式会社 Solid-state imaging device and camera

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5596685A (en) * 1979-01-18 1980-07-23 Sanyo Electric Co Ltd Hetero junction photodiode
JPS55121685A (en) * 1979-03-12 1980-09-18 Sanyo Electric Co Ltd Manufacture of photovoltaic device
JPS564287A (en) * 1979-06-18 1981-01-17 Rca Corp Amorphous silicon solar battery

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5596685A (en) * 1979-01-18 1980-07-23 Sanyo Electric Co Ltd Hetero junction photodiode
JPS55121685A (en) * 1979-03-12 1980-09-18 Sanyo Electric Co Ltd Manufacture of photovoltaic device
JPS564287A (en) * 1979-06-18 1981-01-17 Rca Corp Amorphous silicon solar battery

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59107252A (en) * 1982-12-10 1984-06-21 Matsushita Electric Ind Co Ltd Gas detecting element
JPS6222420B2 (en) * 1982-12-10 1987-05-18 Matsushita Electric Ind Co Ltd
JPS58151072A (en) * 1983-02-08 1983-09-08 Konishiroku Photo Ind Co Ltd Solar battery and manufacture thereof
JPH0516198B2 (en) * 1983-02-08 1993-03-03 Konishiroku Photo Ind
JPS59161881A (en) * 1983-03-07 1984-09-12 Semiconductor Energy Lab Co Ltd Manufacture of photoelectric conversion device
JPH0558268B2 (en) * 1983-03-07 1993-08-26 Handotai Energy Kenkyusho
EP0137291A2 (en) * 1983-09-26 1985-04-17 Kabushiki Kaisha Komatsu Seisakusho Amorphous silicon solar cells
EP0137291B1 (en) * 1983-09-26 1989-08-02 Kabushiki Kaisha Komatsu Seisakusho Amorphous silicon solar cells

Also Published As

Publication number Publication date
JPS6152992B2 (en) 1986-11-15

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