JPS5651880A - Amorphous semiconductor photocell - Google Patents

Amorphous semiconductor photocell

Info

Publication number
JPS5651880A
JPS5651880A JP12817979A JP12817979A JPS5651880A JP S5651880 A JPS5651880 A JP S5651880A JP 12817979 A JP12817979 A JP 12817979A JP 12817979 A JP12817979 A JP 12817979A JP S5651880 A JPS5651880 A JP S5651880A
Authority
JP
Japan
Prior art keywords
layer
electromotive force
pin junction
schottky barrier
type amorphous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12817979A
Other languages
Japanese (ja)
Other versions
JPS6161551B2 (en
Inventor
Misao Saga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP12817979A priority Critical patent/JPS5651880A/en
Publication of JPS5651880A publication Critical patent/JPS5651880A/en
Publication of JPS6161551B2 publication Critical patent/JPS6161551B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

PURPOSE:To obtain a high electromotive force cell by forming a PIN junction on a substrate wherein a schottky barrier is placed on the PIN junction to obtain a high open voltage and the PIN junction and the schottky barrier are formed on the same substrate for series connection. CONSTITUTION:A Ti-Ag electrode metallic layer 12 having a Ti layer at the lower layer for good adehesion with an insulating substrate 11 is formed in grid shape on the insulating substrate 11 with a smooth surface such as glass or the like. A Pt layer 13 is formed on the layer 12 while extending a part of the layer 12. Next, a P type amorphous Si layer 14 contacting with the layer 13, an N type amorphous Si layer 15 and an N<+> type amorphous Si layer 16 are stacked for accumulation. A Ti-Ag electrode metallic layer 17 is similarly provided on the layer 16 to from a photocell element 18. In this case, the layer 17 is extended over the layer 15 and contacted with the adjoining electrode metallic layer 12 for series connection. In this way, electromotive force is obtained by producing a schottky barrier between the layers 13 and 14 and by light incident upon the layer 14. Electromotive force by light incident upon the PIN junction layer 15 composing of the layers 14, 15 and 16 are added to the above electromotive force.
JP12817979A 1979-10-04 1979-10-04 Amorphous semiconductor photocell Granted JPS5651880A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12817979A JPS5651880A (en) 1979-10-04 1979-10-04 Amorphous semiconductor photocell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12817979A JPS5651880A (en) 1979-10-04 1979-10-04 Amorphous semiconductor photocell

Publications (2)

Publication Number Publication Date
JPS5651880A true JPS5651880A (en) 1981-05-09
JPS6161551B2 JPS6161551B2 (en) 1986-12-26

Family

ID=14978367

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12817979A Granted JPS5651880A (en) 1979-10-04 1979-10-04 Amorphous semiconductor photocell

Country Status (1)

Country Link
JP (1) JPS5651880A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5996779A (en) * 1982-11-24 1984-06-04 Semiconductor Energy Lab Co Ltd Photoelectric conversion device
US4626878A (en) * 1981-12-11 1986-12-02 Sanyo Electric Co., Ltd. Semiconductor optical logical device
JPH02164079A (en) * 1988-12-19 1990-06-25 Hitachi Ltd Amorphous silicon solar cell
JPH02164077A (en) * 1988-12-19 1990-06-25 Hitachi Ltd Amorphous silicon solar cell
JPH03157976A (en) * 1989-11-15 1991-07-05 Sanyo Electric Co Ltd Photovoltaic device
US5298087A (en) * 1990-05-15 1994-03-29 Showa Shell Sekiyu K.K. Photovoltaic device useful as a mirror

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4626878A (en) * 1981-12-11 1986-12-02 Sanyo Electric Co., Ltd. Semiconductor optical logical device
JPS5996779A (en) * 1982-11-24 1984-06-04 Semiconductor Energy Lab Co Ltd Photoelectric conversion device
JPH0419713B2 (en) * 1982-11-24 1992-03-31 Handotai Energy Kenkyusho
JPH02164079A (en) * 1988-12-19 1990-06-25 Hitachi Ltd Amorphous silicon solar cell
JPH02164077A (en) * 1988-12-19 1990-06-25 Hitachi Ltd Amorphous silicon solar cell
JPH0583199B2 (en) * 1988-12-19 1993-11-25 Hitachi Ltd
JPH03157976A (en) * 1989-11-15 1991-07-05 Sanyo Electric Co Ltd Photovoltaic device
US5298087A (en) * 1990-05-15 1994-03-29 Showa Shell Sekiyu K.K. Photovoltaic device useful as a mirror

Also Published As

Publication number Publication date
JPS6161551B2 (en) 1986-12-26

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