JPS5632774A - Thin film type photovoltaic element and manufacture thereof - Google Patents

Thin film type photovoltaic element and manufacture thereof

Info

Publication number
JPS5632774A
JPS5632774A JP10819479A JP10819479A JPS5632774A JP S5632774 A JPS5632774 A JP S5632774A JP 10819479 A JP10819479 A JP 10819479A JP 10819479 A JP10819479 A JP 10819479A JP S5632774 A JPS5632774 A JP S5632774A
Authority
JP
Japan
Prior art keywords
thin film
photovoltaic element
manufacture
film type
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10819479A
Other languages
Japanese (ja)
Inventor
Masatoshi Tabei
Yasusuke Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP10819479A priority Critical patent/JPS5632774A/en
Publication of JPS5632774A publication Critical patent/JPS5632774A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To obtain the photovoltaic element having low cost and large area by forming a CdS thin film and a CdTe thin film on a transparent substrate having conductive surface. CONSTITUTION:The CdS thin film 3 is formed by sputtering on the conductive surface 2 of the transparent substrate 1. It is not necessary for the thin film 3 to have a thickness more than 5mum. The CdTe thin film 4 is further formed by sputtering on the film 3. It is preferred that the thickness of the thin film 4 is less than 2mum from the light absorption point, but it is not necessary for the film 4 to have a thickness more than 5mum. Then, an output electrode 5 is mounted on the surface of the thin film 4. In this manner, the photovoltaic element having large area can be obtained inexpensively.
JP10819479A 1979-08-27 1979-08-27 Thin film type photovoltaic element and manufacture thereof Pending JPS5632774A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10819479A JPS5632774A (en) 1979-08-27 1979-08-27 Thin film type photovoltaic element and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10819479A JPS5632774A (en) 1979-08-27 1979-08-27 Thin film type photovoltaic element and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS5632774A true JPS5632774A (en) 1981-04-02

Family

ID=14478385

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10819479A Pending JPS5632774A (en) 1979-08-27 1979-08-27 Thin film type photovoltaic element and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5632774A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61136276A (en) * 1984-12-06 1986-06-24 シーメンス　ソーラー　インダストリーズ，エル．ピー． Thin film solar cell having thin cadmium sulfide and transparent window layer
JPH01189969A (en) * 1988-01-26 1989-07-31 Sumitomo Metal Ind Ltd Photovoltaic element and manufacture thereof
JPH01293577A (en) * 1988-05-20 1989-11-27 Sumitomo Metal Ind Ltd Manufacture of photoelectromotive force element
WO2002049119A3 (en) * 2000-12-12 2003-01-16 Solarflex Technologies Inc Thin film flexible solar cell

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61136276A (en) * 1984-12-06 1986-06-24 シーメンス　ソーラー　インダストリーズ，エル．ピー． Thin film solar cell having thin cadmium sulfide and transparent window layer
JPH01189969A (en) * 1988-01-26 1989-07-31 Sumitomo Metal Ind Ltd Photovoltaic element and manufacture thereof
JPH01293577A (en) * 1988-05-20 1989-11-27 Sumitomo Metal Ind Ltd Manufacture of photoelectromotive force element
WO2002049119A3 (en) * 2000-12-12 2003-01-16 Solarflex Technologies Inc Thin film flexible solar cell
US6548751B2 (en) 2000-12-12 2003-04-15 Solarflex Technologies, Inc. Thin film flexible solar cell

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