JPS54149489A - Thin film solar battery - Google Patents

Thin film solar battery

Info

Publication number
JPS54149489A
JPS54149489A JP5841078A JP5841078A JPS54149489A JP S54149489 A JPS54149489 A JP S54149489A JP 5841078 A JP5841078 A JP 5841078A JP 5841078 A JP5841078 A JP 5841078A JP S54149489 A JPS54149489 A JP S54149489A
Authority
JP
Japan
Prior art keywords
thin film
solar battery
film solar
metal
amorphous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5841078A
Other languages
Japanese (ja)
Other versions
JPS5936435B2 (en
Inventor
Koshiro Mori
Shoichi Fukai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP53058410A priority Critical patent/JPS5936435B2/en
Publication of JPS54149489A publication Critical patent/JPS54149489A/en
Publication of JPS5936435B2 publication Critical patent/JPS5936435B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

PURPOSE:To make it possible to bend a thin film solar battery arbitrarily by using a resin thin film such as polyimide, which abounds in flexibility and heat-proof property, as the substrate in the thin film solar battery. CONSTITUTION:Metal 2 which is brough into ohmic contact with amorphous Si is evaporated in vacuum on polyimide film 1, and amorphous Si 3 is formed by the sputter evaporation method, etc., and a potential barrier is formed. Metal 4 where most of light transmits is formed by evaporation, and comb-shaped electrde 5 is formed on metal 4, and finally, reflection preventing film 6 is formed.
JP53058410A 1978-05-16 1978-05-16 thin film solar cells Expired JPS5936435B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53058410A JPS5936435B2 (en) 1978-05-16 1978-05-16 thin film solar cells

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53058410A JPS5936435B2 (en) 1978-05-16 1978-05-16 thin film solar cells

Publications (2)

Publication Number Publication Date
JPS54149489A true JPS54149489A (en) 1979-11-22
JPS5936435B2 JPS5936435B2 (en) 1984-09-04

Family

ID=13083592

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53058410A Expired JPS5936435B2 (en) 1978-05-16 1978-05-16 thin film solar cells

Country Status (1)

Country Link
JP (1) JPS5936435B2 (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56129379A (en) * 1980-03-12 1981-10-09 Matsushita Electric Ind Co Ltd Solid image-pickup element and manufacture
JPS56153780A (en) * 1980-02-25 1981-11-27 Elektronikcentralen Solar battery unit, method of manufacturing same and panel or battery with plural solar battery units
JPS57132375A (en) * 1981-02-10 1982-08-16 Mitsubishi Electric Corp Semiconductor device
JPS5844648U (en) * 1981-09-18 1983-03-25 カシオ計算機株式会社 small electronic calculator
JPS58103178A (en) * 1981-12-15 1983-06-20 Kanegafuchi Chem Ind Co Ltd Heat resistant thin film solar battery
JPS58115872A (en) * 1981-12-28 1983-07-09 Kanegafuchi Chem Ind Co Ltd Flexible photoelectromotive force generating device
JPS58139299A (en) * 1981-11-20 1983-08-18 サンタ・バ−バラ・リサ−チ・センタ− Fire checker
JPS59108369A (en) * 1982-12-14 1984-06-22 Kanegafuchi Chem Ind Co Ltd Flexible thin film photovoltaic device
JPS6151552U (en) * 1985-07-11 1986-04-07
US4612409A (en) * 1981-11-04 1986-09-16 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Flexible photovoltaic device
JPS62101080A (en) * 1985-10-28 1987-05-11 Sanyo Electric Co Ltd Photosensor
JPH0653534A (en) * 1993-02-04 1994-02-25 Semiconductor Energy Lab Co Ltd Photoelectric converter
KR100400388B1 (en) * 2000-02-01 2003-10-01 마츠시다 덴코 가부시키가이샤 Hair dryer
US8211993B2 (en) 2005-10-21 2012-07-03 Dow Corning Toray Company, Ltd. Inorganic substrate with a thin silica type glass layer, method of manufacturing the aforementioned substrate, coating agent, and a semiconductor device

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56153780A (en) * 1980-02-25 1981-11-27 Elektronikcentralen Solar battery unit, method of manufacturing same and panel or battery with plural solar battery units
JPS6322075B2 (en) * 1980-03-12 1988-05-10 Matsushita Electric Ind Co Ltd
JPS56129379A (en) * 1980-03-12 1981-10-09 Matsushita Electric Ind Co Ltd Solid image-pickup element and manufacture
JPS57132375A (en) * 1981-02-10 1982-08-16 Mitsubishi Electric Corp Semiconductor device
JPS5844648U (en) * 1981-09-18 1983-03-25 カシオ計算機株式会社 small electronic calculator
US4875943A (en) * 1981-11-04 1989-10-24 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Flexible photovoltaic device
US4773942A (en) * 1981-11-04 1988-09-27 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Flexible photovoltaic device
US4612409A (en) * 1981-11-04 1986-09-16 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Flexible photovoltaic device
JPH0351035B2 (en) * 1981-11-20 1991-08-05 Santa Baabara Risaachi Sentaa
JPS58139299A (en) * 1981-11-20 1983-08-18 サンタ・バ−バラ・リサ−チ・センタ− Fire checker
JPS58103178A (en) * 1981-12-15 1983-06-20 Kanegafuchi Chem Ind Co Ltd Heat resistant thin film solar battery
JPS58115872A (en) * 1981-12-28 1983-07-09 Kanegafuchi Chem Ind Co Ltd Flexible photoelectromotive force generating device
JPH0129075B2 (en) * 1982-12-14 1989-06-07 Kanegafuchi Chemical Ind
JPS59108369A (en) * 1982-12-14 1984-06-22 Kanegafuchi Chem Ind Co Ltd Flexible thin film photovoltaic device
JPS6151552U (en) * 1985-07-11 1986-04-07
JPS62101080A (en) * 1985-10-28 1987-05-11 Sanyo Electric Co Ltd Photosensor
JPH0653534A (en) * 1993-02-04 1994-02-25 Semiconductor Energy Lab Co Ltd Photoelectric converter
KR100400388B1 (en) * 2000-02-01 2003-10-01 마츠시다 덴코 가부시키가이샤 Hair dryer
US8211993B2 (en) 2005-10-21 2012-07-03 Dow Corning Toray Company, Ltd. Inorganic substrate with a thin silica type glass layer, method of manufacturing the aforementioned substrate, coating agent, and a semiconductor device

Also Published As

Publication number Publication date
JPS5936435B2 (en) 1984-09-04

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