JPS56152278A - Device for generating photo-electromotive force - Google Patents

Device for generating photo-electromotive force

Info

Publication number
JPS56152278A
JPS56152278A JP5644680A JP5644680A JPS56152278A JP S56152278 A JPS56152278 A JP S56152278A JP 5644680 A JP5644680 A JP 5644680A JP 5644680 A JP5644680 A JP 5644680A JP S56152278 A JPS56152278 A JP S56152278A
Authority
JP
Japan
Prior art keywords
thin film
film
amorphous silicon
electromotive force
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5644680A
Other languages
Japanese (ja)
Inventor
Masaru Yamano
Yukinori Kuwano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP5644680A priority Critical patent/JPS56152278A/en
Publication of JPS56152278A publication Critical patent/JPS56152278A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To permit mass production and obtain a device having a large area with ease by forming a junction to generate photo-electromotive force with a high molecular semicnductor thin film and an amorphous semiconductor thin film. CONSTITUTION:The first transparent electrode film 2 comprising an indium or tin oxide film is formed on a transparent glass substrate 1. On the electrode film 2 formed are an N type amorphous silicon thin film 3, I type amorphous silicon thin film 4, P type high molecular semiconductor thin film 5 and the second electrode film 6 comprising aluminium or the like, in turn. When a light is irradiated on the side of the substrate 1, carriers in a free state are produced mainly in the I type amorphous silicon thin film 4, thus generating voltage between the first and second electrode films 2 and 6.
JP5644680A 1980-04-28 1980-04-28 Device for generating photo-electromotive force Pending JPS56152278A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5644680A JPS56152278A (en) 1980-04-28 1980-04-28 Device for generating photo-electromotive force

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5644680A JPS56152278A (en) 1980-04-28 1980-04-28 Device for generating photo-electromotive force

Publications (1)

Publication Number Publication Date
JPS56152278A true JPS56152278A (en) 1981-11-25

Family

ID=13027310

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5644680A Pending JPS56152278A (en) 1980-04-28 1980-04-28 Device for generating photo-electromotive force

Country Status (1)

Country Link
JP (1) JPS56152278A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58103178A (en) * 1981-12-15 1983-06-20 Kanegafuchi Chem Ind Co Ltd Heat resistant thin film solar battery
JPS58115872A (en) * 1981-12-28 1983-07-09 Kanegafuchi Chem Ind Co Ltd Flexible photoelectromotive force generating device
JPS5996780A (en) * 1982-11-24 1984-06-04 Semiconductor Energy Lab Co Ltd Photoelectric conversion device
JPS59108368A (en) * 1982-12-14 1984-06-22 Kanegafuchi Chem Ind Co Ltd Flexible thin film electromotive force device
JPS6012780A (en) * 1983-07-01 1985-01-23 Matsushita Electric Ind Co Ltd Accumulation system solar battery
US4518815A (en) * 1982-11-24 1985-05-21 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
JPS60146356U (en) * 1984-03-07 1985-09-28 太陽誘電株式会社 amorphous silicon solar cell
JPS61196548U (en) * 1985-05-23 1986-12-08
WO1989006439A1 (en) * 1987-12-28 1989-07-13 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Solar cell array for driving mosfet gates
JP2011222819A (en) * 2010-04-12 2011-11-04 Mitsubishi Chemicals Corp Solar cell
WO2012056946A1 (en) * 2010-10-26 2012-05-03 住友化学株式会社 Power generating device

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58103178A (en) * 1981-12-15 1983-06-20 Kanegafuchi Chem Ind Co Ltd Heat resistant thin film solar battery
JPS58115872A (en) * 1981-12-28 1983-07-09 Kanegafuchi Chem Ind Co Ltd Flexible photoelectromotive force generating device
US4518815A (en) * 1982-11-24 1985-05-21 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
JPS5996780A (en) * 1982-11-24 1984-06-04 Semiconductor Energy Lab Co Ltd Photoelectric conversion device
JPH0415631B2 (en) * 1982-11-24 1992-03-18 Handotai Energy Kenkyusho
JPS59108368A (en) * 1982-12-14 1984-06-22 Kanegafuchi Chem Ind Co Ltd Flexible thin film electromotive force device
JPS6012780A (en) * 1983-07-01 1985-01-23 Matsushita Electric Ind Co Ltd Accumulation system solar battery
JPS60146356U (en) * 1984-03-07 1985-09-28 太陽誘電株式会社 amorphous silicon solar cell
JPS61196548U (en) * 1985-05-23 1986-12-08
WO1989006439A1 (en) * 1987-12-28 1989-07-13 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Solar cell array for driving mosfet gates
JP2011222819A (en) * 2010-04-12 2011-11-04 Mitsubishi Chemicals Corp Solar cell
WO2012056946A1 (en) * 2010-10-26 2012-05-03 住友化学株式会社 Power generating device
JP2012094619A (en) * 2010-10-26 2012-05-17 Sumitomo Chemical Co Ltd Power generating device
CN103180992A (en) * 2010-10-26 2013-06-26 住友化学株式会社 Power generating device

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