JPS55157276A - Amorphous thin film solar battery - Google Patents

Amorphous thin film solar battery

Info

Publication number
JPS55157276A
JPS55157276A JP6634779A JP6634779A JPS55157276A JP S55157276 A JPS55157276 A JP S55157276A JP 6634779 A JP6634779 A JP 6634779A JP 6634779 A JP6634779 A JP 6634779A JP S55157276 A JPS55157276 A JP S55157276A
Authority
JP
Japan
Prior art keywords
amorphous semiconductor
thin film
solar battery
silicon
film solar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6634779A
Other languages
Japanese (ja)
Other versions
JPS5936836B2 (en
Inventor
Yutaka Yamauchi
Katsumi Imaizumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP54066347A priority Critical patent/JPS5936836B2/en
Publication of JPS55157276A publication Critical patent/JPS55157276A/en
Publication of JPS5936836B2 publication Critical patent/JPS5936836B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To improve photoelectric convertion efficiency of a solar battery excessively by fabricating an amorphous thin film solar battery of an amorphous semiconductor thin film which is made from monosilane and an amorphous semiconductor thin film which is made from silicon tetrafluoride. CONSTITUTION:A transparent conductive film 2 is formed on a glass substrate 1, and next thereto n-type and intrinsic amorphous semiconductor layers 3 and 4 which are made from an amorphous semiconductor materials of which main components are silicon and fluorine which are produced by glow discharge in silicon tetrafluoride are formed, and next thereto a p-type amorphous semiconductor layer 5 which is made from an amorphous semiconductor materials of which main components are silicon and hydrogen which are produced by glow discharge in monosilane is formed. Next thereto an aluminum electrode 6 is formed by evaporation of an electron beam evaporation apparatus.
JP54066347A 1979-05-28 1979-05-28 Amorphous thin film solar cell Expired JPS5936836B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54066347A JPS5936836B2 (en) 1979-05-28 1979-05-28 Amorphous thin film solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54066347A JPS5936836B2 (en) 1979-05-28 1979-05-28 Amorphous thin film solar cell

Publications (2)

Publication Number Publication Date
JPS55157276A true JPS55157276A (en) 1980-12-06
JPS5936836B2 JPS5936836B2 (en) 1984-09-06

Family

ID=13313226

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54066347A Expired JPS5936836B2 (en) 1979-05-28 1979-05-28 Amorphous thin film solar cell

Country Status (1)

Country Link
JP (1) JPS5936836B2 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57122583A (en) * 1981-01-22 1982-07-30 Semiconductor Energy Lab Co Ltd Photoelectric converter
JPS5835987A (en) * 1981-08-28 1983-03-02 Taiyo Yuden Co Ltd Amorphous silicon solar cell
US4379943A (en) * 1981-12-14 1983-04-12 Energy Conversion Devices, Inc. Current enhanced photovoltaic device
JPS5954276A (en) * 1982-09-22 1984-03-29 Sanyo Electric Co Ltd Photovoltaic device
JPS61255073A (en) * 1985-05-07 1986-11-12 Semiconductor Energy Lab Co Ltd Semiconductor device
US6043105A (en) * 1985-05-07 2000-03-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor sensitive devices
US7038238B1 (en) 1985-05-07 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a non-single crystalline semiconductor layer

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57122583A (en) * 1981-01-22 1982-07-30 Semiconductor Energy Lab Co Ltd Photoelectric converter
JPS5835987A (en) * 1981-08-28 1983-03-02 Taiyo Yuden Co Ltd Amorphous silicon solar cell
US4379943A (en) * 1981-12-14 1983-04-12 Energy Conversion Devices, Inc. Current enhanced photovoltaic device
FR2518318A1 (en) * 1981-12-14 1983-06-17 Energy Conversion Devices Inc PHOTOVOLTAIC DEVICE WITH HIGHER CURRENT GENERATING CAPACITY
JPS5954276A (en) * 1982-09-22 1984-03-29 Sanyo Electric Co Ltd Photovoltaic device
US6503771B1 (en) 1983-08-22 2003-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor photoelectrically sensitive device
JPS61255073A (en) * 1985-05-07 1986-11-12 Semiconductor Energy Lab Co Ltd Semiconductor device
US6043105A (en) * 1985-05-07 2000-03-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor sensitive devices
US7038238B1 (en) 1985-05-07 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a non-single crystalline semiconductor layer

Also Published As

Publication number Publication date
JPS5936836B2 (en) 1984-09-06

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